Quantitative experimental assessments of stress/strain with sub-micrometer spatial resolution are shown in both
crystalline and amorphous structures of a metal oxide semiconductor (MOS), consisting of Si and SiOx, respectively. A
piezo-spectroscopic (PS) approach, based on the wavelength shift of a spectroscopic band in a solid in response to an
applied strain or stress, has been used throughout this investigation. Although the PS behavior in such different structures
obeyed completely different physical rules, its rationalization gave access to stress/strain information, regardless of the
particular spectroscopic transition involved. In this paper, we applied two complementary PS analytic procedures
suitable for MOS semiconductor devices: (i) using the LO Raman transition for rationalizing the stress state on the
crystalline-Si side of the device; and, (ii) using the electro-stimulated spectrum of oxygen point defects for analyzing the
amorphous SiOx side of the device. As a further step, in this study, we challenged a nanometer-scale spatial resolution in
stress assessments by applying spatially resolved PS procedures, which involved deconvolution of both laser and
electron probes in the respective materials.
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