Numerous precision metrology systems for detecting quanta of any kind are based on silicon detectors. One example are silicon detectors used in scanning electron microscopes (SEM) for electron detection. The need to investigate objects at the very near surface like e.g. cells in biology pushes the scientific progress for these silicon detectors. To study surface near regions of e.g. biological objects electrons with low energies around 500eV are necessary. Unfortunately, the quantum efficiency for such low energy electrons of state-of-the-art electron detectors is low or even non-existent. In this contribution the development of silicon electron detectors with large quantum efficiencies of more than 55% for electrons with an energy of 500eV is presented. The crucial steps in the development like the thin entrance window and a very shallow junction will be discussed and analyzed by simulation and experiments like secondary ion mass spectrometry (SIMS) measurements at CiS.
Numerous precision metrology systems for detecting quanta of any kind are based on silicon detectors. Recently, low-gain avalanche detectors (LGAD) with fast response and reduced noise level have been proposed. Beneficial applications of LGADs developed by CiS [1] in quantum detection e.g. in electron detection systems will be shown.
Nevertheless, under strong irradiation the gain layer of theses LGADs disappears possibly due to formation of ASi-Sii-defects.[2] These defects are point defects in silicon with several metastable configurations in 3 charge states. These are controllable e.g. by light and temperature. Some of them are luminescing, making this defect an interesting candidate in quantum applications, as well. Targeted manipulation by light and temperature of these PL lines in the indium (InSi-Sii) and thallium (TlSi-Sii) case will be shown. Progress in ASi-Sii-defect modelling will be presented and implications for LGAD development and applications in quantum science of these intereseting defcts in silicon are pushed forward.
[1] K. Lauer et al., Phys. Status Solidi A 219(17), 2200177 (2022).
[2] K. Lauer et al., Phys. Status Solidi A 219(19), 2200099 (2022).
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