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Antti Karjalainen
at Aalto Univ
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Author
Publications (2)
Proceedings Article | 5 March 2021 Presentation + Paper
Split Ga vacancies: abundant defects in beta-Ga2O3
Proceedings Volume 11687, 1168709 (2021) https://doi.org/10.1117/12.2585462
KEYWORDS: Gallium, Anisotropy, Thin films, Spectroscopy, Semiconductors, Oxygen, Nondestructive evaluation, N-type semiconductors, Hydrogen, Gallium nitride
Proceedings Article | 1 March 2019 Presentation + Paper
Ga vacancies and electrical compensation in β-Ga2O3 thin films studied with positron annihilation spectroscopy
Filip Tuomisto, Antti Karjalainen, Vera Prozheeva, Ilja Makkonen, Gunter Wagner, Michele Baldini
Proceedings Volume 10919, 1091910 (2019) https://doi.org/10.1117/12.2518888
KEYWORDS: Thin films, Spectroscopy, Crystals, Doping, Electrons, Anisotropy
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