Directed self-assembly (DSA) of block copolymers offers opportunities for resolution enhancement of existing patterning by pitch splitting, contact hole (CH) shrinks or, improvement of pattern profile or patterning window.1-2 By co-optimization of guiding pattern geometry, guiding pattern profile, block copolymer formulation, pattern transfer steps, the after-etch DSA patterns meet target pitch ratio. This DSA assessment shows combination of DSA and single iArF-patterning has potential to meet the specific CD dimension and pitch requirement of a conventional patterns that requires double-patterning.
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