KEYWORDS: Etching, Graphene, Electron beam lithography, Carbon, Chemical vapor deposition, Atomic force microscopy, Image processing, Scanning electron microscopy, Humidity, Oxidation
Nanometer-scale patterning of graphite and graphene has been accomplished through local anodic oxidation
using an AFM tip. The underlying mechanism is explained. To date, protrusions, holes, trenches, and even
words have been patterned in HOPG over scales ranging from 1nm2 to 1mm2 and depths ranging from sub nm
to as deep as 200nm with less than 5 nm variation on the feature size and placement. This same method has
also been applied to CVD-grown graphene providing a resist-free process for patterning graphene at the single
nanometer scale. This capability could provide a method to rival e-beam lithography resolution but without any
pre- or post-processing.
An experimental study of the mode-locking process in erbium- doped fiber lasers (EDFLs) operating at 1.55 micrometer using multiple quantum well saturable absorbers is described. The self-starting passively mode-locked laser was constructed in a Fabry-Perot configuration using the saturable absorber as the back reflector of the cavity. Picosecond pulses that ranged from 3.1 to 38.8 ps were generated using a series of saturable absorbers. The pulse widths were dependent upon the optical properties of the saturable absorber used as the mode- locking element as well as the dispersive elements contained within the cavity. The output power of the EDFL varied from 0.2 to 6.7 mW and was also dependent upon the saturable absorber used in the cavity.
We present the results of an experimental investigation of field-dependent space-charge build-up in (Ga,In)As/(Al,In)As asymmetric double quantum well structures. By using low- temperature photoluminescence spectroscopy, we have found that charge separation dramatically increases the magnitude of the applied field required to achieve resonance (and beyond) of the lowest allowed electron levels in the narrow and wide wells.
Broadly tunable solid state lasers in the near infrared can be created using Cr4+ ions doped in various host lattices. Cr:forsterite and Cr:YAG span much of the spectral region between 1.2 and 1.56 micrometers . New hosts are required for powerful operation at 1.32 micrometers . Novel laser structures may be possible using optical nanocrystals embedded in refractive-index matched hosts. Waveguides with net gain are possible using Cr-doped nanocrystals.
Cr4+ doped in forsterite and YAG form broadly tunable lasers in the 1.2-1.6 micrometers region. These lasers can operation cw with output powers up to 2W, they re both pumped with the 1.06 micrometers output of a Nd:YAG laser, and they can both be modelocked to produce femtosecond pulses. We report on the latest results from these lasers, including self-modelocked operation of the Cr:YAG laser at 1.52 micrometers , with 120 femtosecond pulses, and with 480 mW output power. Both lasers are significantly affected by temperature: output power decreases with increasing temperature. Attempts to find a new host lattice for Cr4+ which does not have the deleterious temperature sensitivity of forsterite of YAG have not led to any breakthroughs.
Regeneratively-initiated, self-sustained, continuous-wave mode-locked operation of a chromium-doped forsterite laser operated at 3.5 degree(s)C is described. Without compensating for the positive group velocity dispersion of the cavity, regenerative, acousto-optic modulation produced pulses of between 41 and 6.5 psec (FWHM) at 1.23 micrometers with average output powers of between 280 and 380 mW, respectively. By employing intracavity negative group velocity dispersion compensation, nearly transform-limited femtosecond pulses of 48 fsec (FWHM) duration were generated with average TEM00 output powers of 380 mW at 1.23 micrometers . These represent the shortest and highest peak power pulses directly generated from this laser system to date.
Carrier energy relaxation times have been measured in In0.53Ga0.47As grown by MBE on InP. Layer thicknesses from 0.5 to 3 microns have been studied. An NaCl color center laser using additive pulse modelocking supplied 150 femtosecond pulses with photon energies between 780 and 806 meV. These were used for time resolved optical saturation measurements near the 750 meV material bandgap. Carrier densities between 0.4 X 1018 and 5.7 X 1018 were achieved. Lifetimes of about 150 femtoseconds are reported. These are observed to decrease with increasing carrier density and with decreasing photon energy.
The relaxation time of hot carriers in bulk Ga47In053As has been measured as a function
of excitation energy near and above the conduction band minimum, and as a function of
carrier density. The carrier relaxation rate increases dramatically with excess energy, due to
the additional energy decay provided by the LO phonons. As a function of carrier density,
the scattering rate is maximum at densities below 1018 cm3, but decreases for higher
carrier concentrations, falling roughly by half at 1019 cm3.
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