KEYWORDS: Sensors, Weapons of mass destruction, Homeland security, System identification, Polarization, Platinum, Ions, Electric field sensors, Detector arrays, Defect detection
We present the results from testing over 100 5x5x12 mm3 TlBr detectors configured as 3D position-sensitive virtual Frisch-grid (VFG) detectors with platinum contacts. The primary objective was to comprehensively understand factors limiting performance and long-term response variations in these detectors. The incorporation of 3D position sensitivity allowed us to monitor internal changes in charge collection efficiency after applying voltage, and to correlate them with device performance changes. The biased detectors underwent defect distribution alterations due to electric field-enhanced ion migration. Our results are based on an extensive dataset obtained from TlBr crystals produced by Radiation Monitoring Devices (RMD). These measurements were part of our development of a handheld isotope identifier based on an array of position-sensitive TlBr detectors, supported by the Department of Homeland Security, Countering Weapons of Mass Destruction Office. The majority of the detectors exhibited a common trend of performance improvement within 1-2 weeks, stabilization for some period of time, then a slow degradation; however, some detectors deviated from this pattern.
TlBr is a promising material for room-temperature semiconductor gamma-ray detectors currently under development by several groups around the world. TlBr has the optimal combination of properties: high atomic number, high density, high mu-tau product, low Fano factor, and lower fabrication cost compared to other materials. The presence of crystal defects and ionic drift-diffusion enchained by the electric field affects the performance of today’s TlBr detectors. As a bias is applied across a detector, a defect distribution inside starts changing due to ion migration. The changes appear to be most pronounced in the first weeks of applying a bias to newly-manufactured crystals during the “conditioning” period. The 3-D position-sensitive detectors provide an opportunity to investigate these processes and their effects on the device performance and on corrections applied to the spectrum. Here, we present results from analyzing response changes in TlBr crystals under applied biases using position-sensitive capacitive Frisch-grid detectors.
This work has been supported by the U.S. Department of Homeland Security, Countering Weapons of Mass Destruction Office, under competitively awarded contract 70RDND18C00000024. This support does not constitute an express or implied endorsement on the part of the Government.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.