Speckle can be reduced through increased laser bandwidth co-optimized with SMO-OPC. Figure 1 is a plot of calculated speckle contrast for the Cymer 860ix laser that is coupled with the ASML NXT 2000 scanner and the Cymer 960ix coupled with the ASML NXT 2050 scanner with the increased pulse duration (TIS is time integral squared) vs laser bandwidth. We focus on 300fm speckle contrast for the XLR 960ix (blue) and the XLR 860ix (red) at 640fm, where the speckle contrast is equal which is a reduction of 30%. On wafer LWR vs laser bandwidth for a 56nm line on a 120nm pitch test case data has been generated. This case was used in the qualification of the pulse stretcher2. Wafers have been processed with a fixed imaging pupil and mask CD with increasing laser bandwidth. This data will be reviewed, to demonstrate a reduction in local critical dimension uniformity (LCDU). The Authors will review simulations, experimental data and the process to develop a working imaging solution that further reduces LCDU.
Arie den Boef, Hugo Cramer, Stefan Petra, Bastiaan Onne Fagginger Auer, Jolanda Schmetz-Schagen, Armand Koolen, Olaf van Loon, Gudrun de Gersem, Pieter Klandermans, Eric Bakker
A concise explanation of spectroscopic scatterometry is presented that is used for modelbased shape metrology of etched features in the production of Memory and Logic semiconductor devices. We also present an angle-resolved scatterometry technique that can measure at high throughput on very small test targets. First measured results are shown that demonstrate the capability on 5×5 μm2 targets.
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