KEYWORDS: Silicon, Transistors, Solar cells, Perovskite, Heterojunctions, External quantum efficiency, Monte Carlo methods, Thin films, Tandem solar cells, Photovoltaics
Tandem solar cells made of organometal halide perovskite and crystalline silicon cells are one of the most promising routes towards high efficiency low cost photovoltaics. Among the possible architectures, monolithic three-terminal tandems hold the promise of the highest energy/cost figure of merit, by combining the advantage of two- and four-terminal approaches. Recently, three-terminal perovskite/silicon tandems have been reported, based on interdigitated back contact heterojunction silicon cells. Alternative solutions that can be integrated with double-sided contact silicon cells are worth to be investigated in view of their higher compatibility with industrial mass production. In this work, we present a simulation-based proof-of-concept of PVK/Si threeterminal tandem cells that use a heterostructure bipolar transistor structure. The extra terminal is implemented at the common selective layer between the perovskite and silicon subcells, avoiding the use of any recombination layer or tunneling junction. We demonstrate promising device performance through physics-based simulations preliminarily validated against experimental data of other perovskite/silicon tandem technologies reported in literature.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.