We proposed an on-chip plasmonic anologue of electromagnetically induced transparency (EIT) with radiative and subradiant resonator side coupled to a metal-dielectric-metal(MDM) waveguide, theoretical and numerical simulation results show that this scheme can represent a three energy level EIT diagram in atomic system. A theoretical model based on coupled mode theory (CMT) is established to analyze the transmission spectrum of the structure, it agrees well with the FDTD result. The transparency peak can be achieved by adjusting the parameters of two resonators, and coupling strength can be adjusted by changing their gap width. The theoretical and simulation results can verify the PIT effects of resonator coupling based on surface plasmon polaritons (SPPs) and may provide a reference for highly integrated optical circuits.
We propose and demonstrate a metal-dielectric-metal(MDM) waveguide side coupled with two stubs to realize plasmon induced transparency (PIT) effect. The dispersion relation of the structure has been plotted by solving the dispersion equation of MDM three layer structure, the transmission spectrum is investigated by coupled mode theory (CMT) and Finite Element Method (FEM) simulation, the CMT results can. The surface plasmon device can also be used as a EIT-like filter with a variable full width of half-maximum (FWHM) and highest transmission over 88%. The maximum group index ng is 42 with a group velocity of 0.023ܿ and transmission of 48%, The normalized delay-bandwidth product (NDBP) can be modulated through changing the gap width of resonators and waveguide bus, the highest is 0.641 at gap width 10 nm, and lowest is 0.246 at 30 nm. The dispersion of group velocity (GVD) changes drastically at narrow gap width and becomes more and more flat at broader gap width, this opens up an avenue for designing optical buffers, switches and modulators.
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