As the semiconductor industry rapidly approaches the 3nm lithography node, on-product overlay (OPO) requirements have become tighter, which drives metrology performance enhancements to meet the reduction in overlay (OVL) residuals. The utilization of multiple measurement wavelengths in Imaging- Based Overlay (IBO) has increased in the past few years to meet these needs. Specifically, the color per layer (CPL) method allows for optimizing the OVL measurement conditions per layer, including focus, light, wavelength (WL), and polarization customization which enhance the metrology results. CPL is applicable for multiple technology segments (logic, foundry, DRAM, 3D NAND), relevant for different devices (DRAM high stack layers, NAND channel holes, etc.), and can work well for both thin and thick layers for standard and EUV lithography processes. In this paper, we will review the benefits of CPL for multiple DRAM and NAND critical layers. We will describe how CPL can contribute to measurement accuracy by quantifying the OVL residual reduction in comparison to single-wavelength (SWL) measurement conditions.
In this paper, the rAIMTM (robust AIM) overlay target was investigated in terms of the stability versus the POR AIM® (Advanced Imaging Metrology) target used for imaging-based overlay (IBO) measurement at after development inspection (ADI). The targets were designed using KLA’s MTD AcuRate™, metrology target design software that performs simulations based on the optical properties related to relative permittivity and permeability about the material of each of the layers. Using advanced device layers, we studied the performance of the POR AIM target versus the newly designed rAIM target for imaging-based overlay measurements. For each target, we quantified the optical contrast, kernel signal, correctable modeled terms, total measurement uncertainty (TMU), and overlay (OVL) residuals from the modeled data through various wavelengths inside the Moiré effect regime in the case of rAIM. We demonstrate that there is an OVL measurement performance improvement using the rAIM target versus the POR AIM target. The measured optical properties of the rAIM target and comparison to the POR AIM target will be presented.
In world-leading semiconductor manufacturing, the device feature size keeps on reducing and with it processes become more challenging in the next technology node. The On Product Overlay (OPO) budget is therefore required to reduce further. Alignment is one of the key factors in reducing overlay wafer to wafer (W2W) variations. To save product area and reduce scribe line width, small alignment mark is evaluated to achieve the similar results as reference mark and to optimize the OPO performance. In this work, we will show the experimental results of small alignment mark and investigate the on product overlay performance by simulation.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.