AlGaN/GaN high electron mobility transistors (HEMTs) have more remarkable properties in application of microwave transistors for high power and high frequency. A less widely studied application is high sensitivity to detect a wide range concentration of glucose. In this work, a photo-electrochemically treated open-gate AlGaN/GaN HEMT biosensor for glucose detection was developed. Through photo-electrochemical treatment, a smooth and thin gallium oxide can be formed on the sensing region. The threshold voltage was changed from -3.3 V to -1.3 V at a swept gain voltage. And a maximum value of transconductance was obtained at the gate voltage of 0 V. Effective functionalization of 3- aminopropyltriethoxysilane (APTES) and immobilization of glucose oxidase (GOx) can be realized on the oxidized sensing region. The proposed sensor exhibited good current response to glucose concentration over a wide linear range with high sensitivity above 8.61 × 105 μA/mM·cm2. The performance of the fabricated biosensor demonstrates the possibility of using AlGaN/GaN HEMTs for high sensitivity glucose detection in biochemical application.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.