Mr. Jaegyu Kim Profile

Jaegyu Kim

at QSI Co Ltd

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Proceedings Article | 24 February 2020 Presentation + Paper

940nm 400mW transverse single mode laser diode with RISA structure

Jeong-Geun Kwak, Jong-Keun Park, Jeong-Hyun Park, Jae-Gyu Kim, An-Sik Choi, Tae-Kyung Kim, Duchang Heo

Proceedings Volume 11301, 113010Z (2020) https://doi.org/10.1117/12.2545268

KEYWORDS: Gallium arsenide, Semiconductor lasers, Aluminum, Reliability, Silicon, Resistance, Sensors, Waveguides, Etching, Oxides

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We present evaluation results of the 940nm 400mW transverse single-mode laser diodes (LDs) with real reflective index self-aligned (RISA) structure based on graded index separate confinement hetero structures (GRIN-SCH) for a three-dimensional (3D) depth sensor. The AlGaAs/InGaAs laser diodes that are adopted with RISA structure have many advantages over conventional complex refractive index guided lasers, what include low operating current, high temperature operation and stable fundamental transverse-mode operation up to high power levels.

Simultaneously, the RISA process is easy to control the waveguide channel width and does not require stable oxide mask for the regrowth of aluminum alloys, so it is possible to manufacture high output power and high reliability laser diodes.

At the optical power 400mW under the continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full-width at half-maximum vertical divergence angle of 23°. A threshold current (I_th) of 33mA, slope efficiency (SE) of 0.81mW/mA and operating current (I_op) of 503mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 657mW and long-term reliability of 60°C with TO-56 package.

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