The photomodulated optical reflectance (PMOR) technology has shown excellent performance in measuring the sample’s doping profile and annealing uniformity after ion implantation. However, during PMOR detection, the physical process of interaction between laser and material can be quite complex. Therefore, it is significant to study a complete physical model of ion implantation measurement for the measurement accuracy of the doping profile. In this study, we have developed a comprehensive physical model that combines physical models for the generation and detection of excess carriers and excess temperature. For the samples with the same doping concentration and different junction depths, the finite element simulation results can distinguish three different doping profiles, which verifies the feasibility of the model in monitoring the doping profile. This study provides theoretical support for the measurement of the doping profile after ion implantation.
Photoacoustic detection has shown excellent performance in measuring the thickness and detecting defects in metal nanofilms. However, during ultrafast photoacoustic detection, signal quality depends on both laser parameters and the physical properties of nanofilms. Therefore, it is important to study how physical processes evolve under different laser parameters to improve signal quality in various film materials. In this study, we have developed a comprehensive physical model that combines the Two-Temperature Model with the acoustic wave generation and detection model. Our numerical results, which are based on a 500-nm AlCu film composed of 95% aluminum and 5% copper, closely align with experimental results, demonstrating the validity of this model. This research offers valuable insights for improving photoacoustic signals in practical applications.
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