Mr. Jun Kotani Profile

Jun Kotani

Chief at Toppan Printing Co Ltd

SPIE Involvement:

Author

Publications (12)

Proceedings Article | 10 May 2016 Paper

Novel EUV mask black border suppressing EUV and DUV OoB light reflection

Shin Ito, Yutaka Kodera, Norihito Fukugami, Toru Komizo, Shingo Maruyama, Genta Watanabe, Itaru Yoshida, Jun Kotani, Toshio Konishi, Takashi Haraguchi

Proceedings Volume 9984, 99840O (2016) https://doi.org/10.1117/12.2242624

KEYWORDS: Extreme ultraviolet, Photomasks, Deep ultraviolet, Extreme ultraviolet lithography, Reflectivity, Semiconducting wafers, Neodymium, Reflection, Ultraviolet radiation, Manufacturing

Read Abstract +

EUV lithography is the most promising technology for semiconductor device manufacturing of the 10nm node and beyond. The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask that is shielded from the exposure light by the Reticle Masking (REMA) blades and the die. When printing a die at dense spacing on an EUV scanner, the reflection from the image border overlaps edges of neighboring dies, affecting CD and contrast in this area. This is related to the fact that EUV absorber stack reflects 1-3% of actinic EUV light. To reduce this effect several types of image border with reduced EUV reflectance (<0.05%) have been proposed; such an image border is referred to as a black border. In particular, an etched multilayer type black border was developed; it was demonstrated that CD impact at the edge of a die is strongly reduced with this type of the black border (BB). However, wafer printing result still showed some CD change in the die influenced by the black border reflection. It was proven that the CD shift was caused by DUV Out of Band (OOB) light from the EUV light source. New types of a multilayer etched BB were evaluated and showed a good potential for DUV light suppression. In this study, a novel BB called ‘Hybrid Black Border’ (HBB) has been developed to eliminate EUV and DUV OOB light reflection by applying optical design technique and special micro-fabrication technique. A new test mask with HBB is fabricated without any degradation of mask quality according to the result of CD performance in the main pattern, defectivity and cleaning durability. The imaging performance for N10 imaging structures is demonstrated on NXE:3300B in collaboration with ASML. This result is compared to the imaging results obtained for a mask with the earlier developed BB, and HBB has achieved ~3x improvement; less than 0.2 nm CD changes are observed in the corners of the die. A CD uniformity budget including impact of OOB light in the die edge area is evaluated which shows that the OOB impact from HBB becomes comparable with other CDU contributors in this area. Finally, we state that HBB is a promising technology allowing for CD control at die edges.

Proceedings Article | 18 March 2016 Paper

Novel EUV mask black border and its impact on wafer imaging

Yutaka Kodera, Norihito Fukugami, Toru Komizo, Genta Watanabe, Shin Ito, Itaru Yoshida, Shingo Maruyama, Jun Kotani, Toshio Konishi, Takashi Haraguchi

Proceedings Volume 9776, 977615 (2016) https://doi.org/10.1117/12.2218942

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Deep ultraviolet, Imaging systems, Semiconducting wafers, Reflectivity, Printing, Semiconductor manufacturing, Reflection, Manufacturing

Read Abstract +

Proceedings Article | 17 October 2014 Paper

Black border, mask 3D effects: covering challenges of EUV mask architecture for 22nm node and beyond

Natalia Davydova, Eelco van Setten, Robert de Kruif, Brid Connolly, Norihito Fukugami, Yutaka Kodera, Hiroaki Morimoto, Yo Sakata, Jun Kotani, Shinpei Kondo, Tomohiro Imoto, Haiko Rolff, Albrecht Ullrich, Ramasubramanian Kottumakulal Jaganatharaja, Ad Lammers, Dorothe Oorschot, Cheuk-Wah Man, Guido Schiffelers, Joep van Dijk

Proceedings Volume 9231, 923102 (2014) https://doi.org/10.1117/12.2066299

KEYWORDS: Deep ultraviolet, Reflectivity, Extreme ultraviolet, Photomasks, Reticles, Scanners, Aluminum, Extreme ultraviolet lithography, Atomic force microscopy, Semiconducting wafers

Read Abstract +

Proceedings Article | 28 July 2014 Paper

Achievements and challenges of EUV mask imaging

Proceedings Volume 9256, 925602 (2014) https://doi.org/10.1117/12.2072945

KEYWORDS: Reticles, Photomasks, Extreme ultraviolet, Semiconducting wafers, Reflectivity, 3D metrology, Deep ultraviolet, Neodymium, Atomic force microscopy, Scanners

Read Abstract +

Proceedings Article | 3 October 2013 Paper

Impact of an etched EUV mask black border on imaging: part II

Natalia Davydova, Robert de Kruif, Hiroaki Morimoto, Yo Sakata, Jun Kotani, Norihito Fukugami, Shinpei Kondo, Tomohiro Imoto, Brid Connolly, Dries van Gestel, Dorothe Oorschot, David Rio, John Zimmerman, Noreen Harned

Proceedings Volume 8880, 888027 (2013) https://doi.org/10.1117/12.2027596

KEYWORDS: Deep ultraviolet, Reflectivity, Reticles, Extreme ultraviolet, Semiconducting wafers, Scanners, Extreme ultraviolet lithography, Photomasks, Optical proximity correction, Aluminum

Read Abstract +

Proceedings Article | 8 November 2012 Paper

Conductive layer for charge dissipation during electron-beam exposures

Luisa Bozano, Ratnam Sooriyakumaran, Takayuki Nagasawa, Satoshi Watanabe, Yoshio Kawai, Shinpei Kondo, Jun Kotani, Masayuki Kagawa, Linda Sundberg, Martha Sanchez, Elizabeth Lofano, Charles Rettner, Tasuku Senna, Thomas Faure

Proceedings Volume 8522, 85220O (2012) https://doi.org/10.1117/12.977181

KEYWORDS: Image quality, Photomasks, Semiconducting wafers, Polymers, Electron beam lithography, Line edge roughness, Image registration, Photoresist processing, Neodymium, Ions

Read Abstract +

Proceedings Article | 30 June 2012 Paper

Black border with etched multilayer on EUV mask

Norihito Fukugami, Kazuaki Matsui, Genta Watanabe, Takeshi Isogawa, Shinpei Kondo, Yutaka Kodera, Yo Sakata, Shinji Akima, Jun Kotani, Hiroaki Morimoto, Tsuyoshi Tanaka

Proceedings Volume 8441, 84411K (2012) https://doi.org/10.1117/12.965536

KEYWORDS: Extreme ultraviolet, Reflectivity, Photomasks, Semiconducting wafers, Deep ultraviolet, Etching, Manufacturing, Inspection, Extreme ultraviolet lithography, Image processing

Read Abstract +

Proceedings Article | 14 October 2011 Paper

High resolution mask process and substrate for 20nm and early 14nm node lithography

Tom Faure, Satoshi Akutagawa, Karen Badger, Louis Kindt, Jun Kotani, Takashi Mizoguchi, Satoru Nemoto, Kazunori Seki, Tasuku Senna, Richard Wistrom, Shinich Igarashi, Yukio Inazuki, Kazuhiro Nishikawa, Hiroki Yoshikawa

Proceedings Volume 8166, 816617 (2011) https://doi.org/10.1117/12.898889

KEYWORDS: Photomasks, SRAF, Opacity, Inspection, Chromium, Etching, Optical proximity correction, Photoresist processing, Resistance, Lithography

Read Abstract +

The lithography challenges posed by the 20 nm and 14 nm nodes continue to place strict minimum feature size requirements on photomasks. The wide spread adoption of very aggressive Optical Proximity Correction (OPC) and computational lithography techniques that are needed to maximize the lithographic process window at 20 nm and 14 nm groundrules has increased the need for sub-resolution assist features (SRAFs) down to 50 nm on the mask. In addition, the recent industry trend of migrating to use of negative tone develop and other tone inversion techniques on wafer in order to use bright field masks with better lithography process window is requiring mask makers to reduce the minimum feature size of opaque features on the reticle such as opaque SRAFs. Due to e-beam write time and pattern fidelity requirements, the increased use of bright field masks means that mask makers must focus on improving the resolution of their negative tone chemically amplified resist (NCAR) process. In this paper we will describe the development and characterization of a high resolution bright field mask process that is suitable for meeting 20 nm and early 14 nm optical lithography requirements. Work to develop and optimize use of an improved chrome hard mask material on the thin OMOG binary mask blank¹ in order to resolve smaller feature sizes on the mask will be described. The improved dry etching characteristics of the new chrome hard mask material enabled the use of a very thin (down to 65 nm) NCAR resist. A comparison of the minimum feature size, linearity, and through pitch performance of different NCAR resist thicknesses will also be described. It was found that the combination of the improved mask blank and thinner NCAR could allow achievement of 50 nm opaque SRAFs on the final mask.. In addition, comparisons of the minimum feature size performance of different NCAR resist materials will be shown. A description of the optimized cleaning processes and cleaning durability of the 50 nm opaque SRAFs will be provided. Furthermore, the defect inspection results of the new high resolution mask process and substrate will be shared.

Proceedings Article | 1 November 2007 Paper

Pattern density and process related CD corrections at 32nm node

Zdenek Benes, Jun Kotani

Proceedings Volume 6730, 67304A (2007) https://doi.org/10.1117/12.747599

KEYWORDS: Etching, Critical dimension metrology, Photomasks, Photoresist processing, Cadmium, Modulation, Coating, Plasma etching, Materials processing, Reticles

Read Abstract +

Proceedings Article | 20 October 2006 Paper

Chemical flare long-range proximity effects in photomask manufacturing with chemically amplified resists

Daniel Sullivan, Yusuke Okawa, Kazuhiko Sugawara, Zdenek Benes, Jun Kotani

Proceedings Volume 6349, 634905 (2006) https://doi.org/10.1117/12.686732

KEYWORDS: Photomasks, Modulation, Manufacturing, Chemically amplified resists, Industrial chemicals, Photoresist materials, Critical dimension metrology, Reactive ion etching, Photoresist processing, Standards development

Read Abstract +

Proceedings Article | 17 December 2003 Paper

Mask CD uniformity improvement by dry etching loading effect correction

Jun Kotani, Toshiaki Yanagihara, Eiji Umeda, Takashi Senou, Yasutaka Kikuchi, Tsuyoshi Tanaka, Yoshimitsu Okuda

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.524430

KEYWORDS: Dry etching, Chromium, Photomasks, Data conversion, Software development, Electronics, Plasma, Photoresist processing, Data corrections, Optical proximity correction

Read Abstract +

Proceedings Article | 22 January 2001 Paper

Performance of JBX-9000MV with negative-tone resist for 130-nm reticle

Naoki Takahashi, Masayoshi Tsuzuki, Jun Kotani, Jun Yoshida, Yuji Kodaira, Yuko Oi, Yoshiro Yamada, Yuichi Matsuzawa

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410702

KEYWORDS: Reticles, Critical dimension metrology, Dry etching, Photoresist processing, LCDs, Cadmium, Logic, Product engineering, Motion estimation, Electronics

Read Abstract +

Showing 5 of 12 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years