Low angle bevelled-mesa structures are crucial for development of high quality GaN p-n high voltage diodes and photodetectors. However, there is lack of details of development of such a process in the literature. Here in this work, we present results of optimization of bevelled mesa fabrication process for vertical GaN p-n diodes using plasma etching through photoresist mask prepared using reflow process. Developed process of formation of low angle bevelled mesa structures was integrated in the vertical GaN p-n diodes on bulk GaN substrates fabrication process. Very low leakage current density below 10-9 A/cm2 and very high Ion/Ioff current ratio over 1013 was obtained. Low values of ideality factor down to 1.5 were obtained as well. These prove applicability of developed process in technology of vertical GaN p-n diodes on bulk gallium nitride substrates.
Normally-off AlGaN/GaN HEMTs with p-GaN-gate, which offer high drain current and low on-state resistance at high threshold voltage and breakdown voltage values above 600V, are particularly attractive for high-power electronics applications. In this work we present the results of development of high power normally-off p-GaN gate AlGaN/GaN high electron mobility transistors carried out at Łukasiewicz Research Network-Institute of Microelectronics and Photonics. We have developed key technological steps i.e. selective etching of p-GaN layers over AlGaN, deposition of proper passivation layer as well as thermally stable isolation of adjacent devices using selective Fe+ ion implantation, which were integrated in the process flow of manufacturing of high power transistors. Finally we have shown measurements of developed normally-off p-GaN gate AlGaN/GaN HEMT power transistors assembled using in-house developed process in TO-220 package.
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