Cubic InxGa1-xN alloys are a candidate material for optoelectronic applications because they lack internal polarization fields and promise to cover a vast range of emission wavelengths. However, the large discrepancy in interatomic spacing and growth temperatures of c-GaN and c-InN hinder InxGa1-xN-growth. We report cubic InxGa1-xN layers grown by plasmaassisted MBE and achieve continuous miscibility of the indium content x(In) over the whole composition range. X-ray diffraction precisely monitors the composition, phase purity and miscibility of the thin films. Furthermore, we discuss the impact of the indium content on the crystallinity. Complementary, low-temperature photoluminescence studies elucidate the optical response of cubic InxGa1-xN layers.
Two-dimensional (2D) materials are gaining great attention due to their extraordinary thickness-dependent properties. 2D Ga-VI semiconductors have bandgaps in the UV region making them candidates for several LED concepts. The Indium-containing counterparts of Ga-chalcogenides moreover have small electron effective masses and high mobilities. Hence, 2D III-chalcogenides are promising materials for next-generation optoelectronic applications. We establish metal organic chemical vapor deposition (MOCVD) to find suitable growth routines for 2D materials. We will summarize our current understanding of the MOCVD growth of III-chalcogenides by systematic variation of the growth parameters and correlate the findings to optoelectronic properties of the layers.
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