Over the years, lithography engineers have continued to focus on CD control, overlay and process capability to meet node requirements for yield and device performance. The use of ArFi lithography for advanced process nodes demands challenging patterning budget improvements in the sub-nm range.1 In 3D NAND devices, the height differences between the cell and periphery create issues with the ability to adequately image and maintain a useable process window in both regions. Previous work by Fukuda2 developed a multi-exposure technique at multi-focus positions to image contact holes with adequate DOF. Lalovic3 demonstrated a fixed 2 wavelength technique to improve DOF called RELAX. ASML introduced EFESE Rx, a method of tilting the stage during exposure to create multiple focus positions and finally Lalovic4 introduced a broadband laser solution to provide additional DOF. All of these techniques suffered from a number of problems that limited usability.
In this work the authors will introduce a new method to increase DOF through alternating wavelength’s from an ArFi light source. This technique, called MFI (multi-focal imaging), can be tuned specifically to provide the required amount of wavelength separation for a specific DOF need.
Two focal positions are created that are averaged over the exposure field. The authors will review this wavelength “dithering” approach which can be turned on and off, thus eliminating any potential scanner calibration issues. Initial simulation studies with a fixed source and mask indicated increased DOF with wavelength separation. These DOF improvements have been confirmed with on-wafer single-exposure data. The Tachyon MFI aware engine flow will be reviewed using several customer use cases that have been analyzed to demonstrate maximum DOF and ILS vs wavelength separation. The authors will also review the optimization of new pupils and OPC solutions that are unique with each wavelength separation case and maximize process capability. The presentation will close with a product availability timeline and roadmap.
As ArF immersion lithography continues to be extended by adopting multi-patterning techniques, imaging requirements continue to become more stringent [1-3]. For multiple patterning based logic devices, the optimal printability is not only driven by the optimization of the optical proximity correction (OPC), but also by complex process factors, such as resist, exposure tool, and mask-related error performance levels. In addition the light source plays a crucial role; it has been widely demonstrated [4-8] how changes in the E95 bandwidth can significantly lead to changes in on wafer patterning due image contrast changes. Cymer has developed novel computational and experimental approaches to enable process characterization studies [9-11]. Using these techniques, simulations were used to assess how E95 bandwidth changes can erode the CDU budget on ≤ 20 nm logic features. Using the results of these simulations, experimental conditions were defined to study the on wafer impact of light source performance on an imec N10 Logic-type test vehicle via six different Metal 1 Logic features. The imaging metrics used to track patterning response are process window (PW), line width roughness (LWR), and local critical dimension uniformity (LCDU).
Lithography process window (PW) and CD uniformity (CDU) requirements are being challenged with scaling across all device types. Aggressive PW and yield specifications put tight requirements on scanner performance, especially on focus budgets resulting in complicated systems for focus control. In this study, an imec N10 Logic-type test vehicle was used to investigate the E95 bandwidth impact on six different Metal 1 Logic features. The imaging metrics that track the impact of light source E95 bandwidth on performance of hot spots are: process window (PW), line width roughness (LWR), and local critical dimension uniformity (LCDU).
In the first section of this study, the impact of increasing E95 bandwidth was investigated to observe the lithographic process control response of the specified logic features. In the second section, a preliminary assessment of the impact of lower E95 bandwidth was performed. The impact of lower E95 bandwidth on local intensity variability was monitored through the CDU of line end features and the LWR power spectral density (PSD) of line/space patterns. The investigation found that the imec N10 test vehicle (with OPC optimized for standard E95 bandwidth of300fm) features exposed at 200fm showed pattern specific responses, suggesting areas of potential interest for further investigation.
As DUV multi-patterning requirements continue to become more stringent, it is critical that all sources of lithography patterning variability are characterized and monitored. Advanced process characterization studies have been enabled using Cymer’s novel technique to modulate Beam Divergence and Polarization, and Energy, Bandwidth, or Wavelength light source performance. These techniques have been instrumental in helping identify process sensitivities that enable proactive light source monitoring and excursion detection using SmartPulseTM.
Demonstration of the benefits of these technologies is provided through results from recent experiments at imec. Changes in patterning performance are characterized using top down CD-SEM metrology, enabling excellent correlation between optical parameters and on wafer attributes for typical patterning geometries. In addition, new results show that changes in laser beam parameter performance can have measurable wafer patterning and/or illumination impacts. Chipmakers can benefit from the use of this capability to perform proactive, comprehensive characterization of current and next generation process nodes.
With the implementation of multi-patterning ArF-immersion for sub 20nm integrated circuits (IC), advances in equipment monitoring and control are needed to support on-wafer yield performance. These in-situ equipment monitoring improvements, along with advanced litho-cell corrections based on on-wafer measurements, enable meeting stringent overlay and CD control requirements for advanced lithography patterning. The importance of light-source performance on lithography pattering (CD and overlay) has been discussed in previous publications.[1-3] Recent developments of Cymer ArF light-source metrology and on-board monitoring enable end-users to detect, for each exposed wafer, changes in the near-field and far-field spatial profiles and polarization performance, [4-6] in addition to the key ‘optical’ scalar parameters, such as bandwidth, wavelength and energy. The major advantage of this capability is that the key performance metrics are sampled at rates matched to wafer performance, e.g. every exposure field across the wafer, which is critical for direct correlation with on-wafer performance for process control and excursion detection.
Reducing lithography pattern variability has become a critical enabler of ArF immersion scaling and is required to ensure consistent lithography process yield for sub-30nm device technologies. As DUV multi-patterning requirements continue to shrink, it is imperative that all sources of lithography variability are controlled throughout the product life-cycle, from technology development to high volume manufacturing. Recent developments of new ArF light-source metrology and monitoring capabilities have been introduced in order to improve lithography patterning control.[1] These technologies enable performance monitoring of new light-source properties, relating to illumination stability, and enable new reporting and analysis of in-line performance.
In order to improve process control of the lithography process, enhanced On-board metrology, measuring of the light
source beam parameters with software solutions for monitoring, reporting and analyzing the light source's performance
has been introduced.
Multiple lasers in the field were monitored after installing of a new On-board metrology product called SmartPulse. It
was found that changes in beam parameters can be significantly reduced at major module change service events when
new service procedures and On-board metrology were used, while significant beam parameter shift and illumination
pupil changes were observed when On-board metrology was not available at service events, causing lengthy scanner
illumination pupil recalibration.
SmartPulseTM software from Cymer Inc. was used to monitor the variation of light source performance parameters,
including critical beam parameters, at wafer level resolution. Wafer CD was correlated to the recorded beam parameters
for about a month of operation, and both wafer CD and beam parameters showed stable performance when the light
source was operating at optimal conditions.
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