Dr. Phuong Vuong Profile

Dr. Phuong Vuong

at Georgia Tech - CNRS

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Author

Publications (4)

Proceedings Article | 21 March 2023 Presentation

Novel approaches of epitaxial growth and layer transfer techniques using 2D h-BN for flexible GaN-based LEDs and Micro-LEDs

Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Soufiane Karrakchou, Adama Mballo, Rajat Gujrat, Ashutosh Srivastava, Jean-Paul Salvestrini, Paul Voss, Gilles Patriarche

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2654225

KEYWORDS: Light emitting diodes, Heterojunctions, Silicon, Semiconductors, Quartz, Metalorganic chemical vapor deposition, Gallium nitride, Epitaxy, Chemical vapor deposition, Boron

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Proceedings Article | 16 March 2023 Presentation + Paper

Toward both p- and n-doping of hexagonal boron nitride using sub-bandgap illumination

A. Perepeliuc, R. Gujrati, A. Srivastava, P. Vuong, V. Ottapilakkal, P. Voss, S. Sundaram, J. Salvestrini, A. Ougazzaden

Proceedings Volume 12422, 124220H (2023) https://doi.org/10.1117/12.2662309

KEYWORDS: Light sources and illumination, Boron nitride, Electrical conductivity, Semiconductors, Photocurrent, Ultraviolet radiation, Laser irradiation

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Proceedings Article | 5 March 2021 Presentation

Van der Waals epitaxy of nitride optoelectronic devices based on two-dimensional hBN

Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Adama Mballo, Gilles Patriarche, Ashutosh Srivastava, Ali Ahaitouf, Simon Gautier, Tarik Moudakir, Paul Voss, Jean Paul Salvestrini

Proceedings Volume 11686, 116861G (2021) https://doi.org/10.1117/12.2584985

KEYWORDS: Epitaxy, Optoelectronic devices, Solar cells, Sensors, Photodetectors, Light emitting diodes, Heterojunctions, Field effect transistors

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Proceedings Article | 5 March 2021 Presentation

Side-by-side comparison of pre- and post-transferred LEDs grown on 2D hexagonal boron nitride onto arbitrary substrates

Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, Ashutosh Srivastava, Rajat Gujrati, Ali Ahaitouf, Paul Voss, Jean-Paul Salvestrini, Abdallah Ougazzaden

Proceedings Volume 11686, 1168619 (2021) https://doi.org/10.1117/12.2577275

KEYWORDS: Light emitting diodes, Boron, Heterojunctions, Sapphire, Optoelectronic devices, New and emerging technologies, Measurement devices, Materials processing, Material characterization, 3D metrology

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