The growth process of molybdenum disulfide (MoS2) films on SiO2, Al2O3 and BN substrates is presented. Samples were measured by Raman spectroscopy and Secondary Ion Mass Spectrometry to investigate mechanism of increase lateral dimensions and quality of growth material. Size of obtained layers is crucial for further processing and application into current microelectronic devices. Considering all the substrates used in sulfurization process of molybdenum layers, hexagon Boron Nitride (hBN) is the most promising material. It is the result of its high crystalline quality and lack of oxygen atoms, which diffuse to surface during production process in 750°C and disallow to increase dimensions of MoS2. Described method of sulfurization creates possibility of production of that material on large area substrates and easy integration with other two dimensional compounds like graphene, WS2, SiC, hBN for new types of electronic applications.
Aluminium nitride is particularly interesting due to its unique properties such as a wide and direct band gap as well as high thermal conductivity. High quality AlN epitaxial layers are needed in UV devices and are used as a buffer layer in the deposition of HEMTs. Its quality has an impact on further deposition as well as two dimensional electron gas properties for AlGaN/GaN HEMTs. It was observed that AlN has crucial impact on electrical as well as structural properties of AlGaN/GaN heterostructures.
Epitaxial lift-off (ELO) is a process which enables the removal of solar cell structures (one junction GaAs, two junction GaAs/InGaP or three junction GaAs/InGaAs/InGaP) from the substrate on which they are grown and their transfer onto lightweight carriers such as metal or polymeric insulator films. The said solar cells exhibit superior power conversion efficiency compared with alternative single-junction photovoltaic cell designs such as those based on crystalline Si, copper indium gallium sulfide (CIGS) or CdTe. The major advantage of ELO solar cells is the potential for wafer reuse, which can enable significant manufacturing cost reduction by minimizing the consumption of expensive wafers. Here in this work we have grown one junction GaAs solar cells on GaAs (100) substrates. A 10 nm thick AlAs layer has been used as a release layer, which has been selectively etched in HF solution. We have investigated different methods of transferring thin films onto polymer and copper foils, including the usage of temporary mounting adhesives and electro-conductive pastes. Lift-off has been demonstrated to be a very promising technique for producing affordable solar cells with a very high efficiency of up to 30%.
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