A model is developed to study SiC-based IMPATTs to operate at D-band frequency and the device properties of 3C, 4H,
6H-SiC based SDR IMPATTs are compared at the same operating conditions and frequency of operations. A noise
analysis model is also developed to compare the noise characteristics of 3C, 4H and 6H SiC-based SDR IMPATTs. The
results show that 3C-SiC based SDR IMPATTs have better power delivery capability whereas 4H SiC-based SDR
IMPATTs are less noisy. When a power noise tradeoff consider, it is seen that 4H SiC-based SDR IMPATTs have better
Noise Measure than the other two polytypes. These results can be used as the first hand information by the
experimentalist.
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