In this study, the doping of boron in cuprous oxide as p-type material and its application for optoelectronic device is presented. Thin films are fabricated using metallic targets of Copper and Boron by rf magnetron co-sputtering in the Ar and O2 ambient. The X-ray diffraction spectra of the doped samples matched with cubic Cu2O phase, with no significant peak shift compared to intrinsic Cu2O film. Raman analysis confirmed the Cu2O phase in both doped and un-doped films. For doped thin films optical transparency was enhanced compared to intrinsic cuprous oxide. Band gap of doped and undoped Cu2O were 2.67 eV and 2.47 eV respectively. Heterojunction is fabricated with n-Si and the electrical properties were studied.
Zinc oxide (ZnO) thin films were deposited on quartz, silicon, and polymer substrates by pulsed laser deposition (PLD)
technique at different oxygen partial pressures (0.007 mbar to 0.003 mbar). Polycrystalline ZnO films were obtained at
room temperature when the oxygen pressure was between 0.003 mbar and .007 mbar, above and below this pressure the
films were amorphous as indicated by the X-ray diffraction (XRD). ZnO films were deposited on Al2O3 (0001) at
different substrate temperatures varying from 400°C to 600°C and full width half maximum (FWHM) of XRD peak is
observed to decrease as substrate temperature increases. The optical band gaps of these films were nearly 3.3 eV. A
cylindrical Langmuir probe is used for the investigation of plasma plume arising from the ZnO target. The spatial and
temporal variations in electron density and electron temperature are studied. Optical emission spectroscopy is used to
identify the different ionic species in the plume. Strong emission lines of neutral Zn, Zn+ and neutral oxygen are observed. No electronically excited O+ cations are identified, which is in agreement with previous studies of ZnO plasma
plume.
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