In the last year, the AIMS® EUV has been extended to applications beyond the native defectivity review, such as the metrology of EUV Phase Shift Masks (PSM).
The technology developed for the AIMS® EUV Phase metrology application enables the measurement of the phase difference between the absorber reflected light relative to the light reflected by the multilayer. A reliable information over the mask phase is important for process control in the mask production chain, as well as for the optimization of the wafer exposure process on the scanner.
In this paper we will describe the challenges of enabling a precise metrology for the mask phase and will investigate the advantages of employing EUV phase metrology capability as process of record in the mask shop for different engineering and production steps: etch control, imaging optimization and wafer process window enhancement.
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