Exposure to chemicals in everyday life is now more prevalent than ever. Air and water pollution can be delivery mechanisms for toxins, carcinogens, and other chemicals of interest (COI). A compact, multiplexed, chemical sensor with high responsivity and selectivity is desperately needed. We demonstrate the integration of unique Zr-based metal organic frameworks (MOFs) with a plasmonic transducer to demonstrate a nanoscale optical sensor that is both highly sensitive and selective to the presence of COI. MOFs are a product of coordination chemistry where a central ion is surrounded by a group of ligands resulting in a thin-film with nano- to micro-porosity, ultra-high surface area, and precise structural tunability. These properties make MOFs an ideal candidate for gaseous chemical sensing, however, transduction of a signal which probes changes in MOF films has been difficult. Plasmonic sensors have performed well in many sensing environments, but have had limited success detecting gaseous chemical analytes at low levels. This is due, in part, to the volume of molecules required to interact with the functionalized surface and produce a detectable shift in plasmonic resonance frequency. The fusion of a highly porous thin-film layer with an efficient plasmonic transduction platform is investigated and summarized. We will discuss the integration and characterization of the MOF/plasmonic sensor and summarize our results which show, upon exposure to COI, small changes in optical characteristics of the MOF layer are effectively transduced by observing shifts in plasmonic resonance.
Metasurfaces have been investigated for various applications ranging from beam steering, focusing, to polarization conversion. Along with passive metasurfaces, significant efforts are also being made to design metasurfaces with tunable optical response. Among various approaches, voltage tuning is of particular interest because it creates the possibility of integration with electronics. In this work, we demonstrate voltage tuning of reflectance from a complementary metasurface strongly coupled to an epsilon-near-zero (ENZ) mode in an ultrathin semiconductor layer. Our approach involves electrically controlling the carrier concentration of the ENZ layer to modulate the polaritonic coupling between the dipole resonances of the metasurface and the ENZ mode for modulating the reflectance of the metasurface. The hybrid structure we fabricate is similar to MOSCAP configuration where the complementary metasurface offers a continuous gold top layer for biasing and positive/negative bias to the metasurface leads to accumulation/depletion of carriers in the ENZ layer beneath it. We optimized our structure by using InGaAs as the ENZ material because of its high mobility and low effective mass. This allowed us to reduce the doping requirement and thereby reduce the ionized impurity scattering as well as the reverse bias required to deplete the ENZ layer. For low leakage and efficient modulation of carrier density, we used Hafnia as the gate dielectric. We further added a reflecting backplane below the ENZ layer to enhance the interaction and by applying bias, we achieved spectral shifts of 500 nm and amplitude modulation of 11% of one of the polariton branches at 14 µm.
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