Since III-nitride semiconductor-based ultraviolet (UV) light-emitting diodes (LEDs) are compact and efficient, they can be suggested as a substitute for conventional arc-lamps. However, reported UV LEDs focused on a narrow range of UV spectrum contrary to conventional arc-lamps. Here, we introduce GaN quantum dots (QDs) grown on different facets of hexagonal truncated pyramid structures on a conventional sapphire substrate. These structures include semipolar facets as well as a polar facet, which obtain intrinsically different piezoelectric fields and growth rates of QDs. Consequently, we demonstrated a plateau-like broadband UV emitter ranging from UV-C to UV-A from the GaN QDs.
Crystal orientation effects on electronic and optical properties of wurtzite (WZ) InGaN/GaN quantum wells (QWs) with piezoelectric (PZ) and spontaneous (SP) polarizations are investigated using the multiband effective-mass theory and non-Markovian optical model. Also, the electron overflow in non-polar InGaN/GaN QW structures with a superlattice (SL)-like electron injector (EI) layer is investigated using a simple model. The effective mass along k'y of the topmost valence band greatly decreases with increasing crystal angle while the y'-polarized optical matrix element significantly increases with increasing crystal angle. In particular, matrix elements of non-polar (1120)-oriented a-plane QW structure with a relatively higher In composition of 0.4 are about three and half times bigger than those of the (0001)-oriented c-plane QW structure. On the other hand, in the case of the QW structure with a relatively smaller In composition, the difference of matrix elements between the (0001)- and (1120)-oriented QW structures is smaller than that of the QW structure with a relatively higher In composition. With increasing crystal angle, the optical gain peak for the x'-polarization gradually decreases while that for the y'-polarization significantly increases. As a result, the in-plane optical anisotropy increases with increasing crystal angle. The in-plan optical anisotropy of non-polar a-plane QW structure gradually increases with increasing transition wavelength or In composition. The optical anisotropy is ranging from 0.50 at 400nm to 0.80 at 530 nm for the QW structure with Lw = 30 Å. It is found that the electron overflow is found to be greatly reduced by using the SL-like EI laye and rapidly decreases with increasing the number of EI layer. Hence, we expect that the droop phenomenon can be reduced by using the EI layers.
We present a systematic characterization of the gain, refractive index, and linewidth enhancement factor in a semiconductor laser and a semiconductor optical amplifier. We compare the refractive index shift and linewidth enhancement factor due to electrical pumping alone and then with electrical and optical pumping. Changes in carrier density are estimated throughout with a many-body optical gain model taking into account the valance-band mixing. The spectral characteristics of the refractive index shift show potentially ideal conditions for broadband cross-phase modulation. Further measurements of the refractive index shift and linewidth enhancement factor in a semiconductor optical amplifier show operating conditions under which the refractive index shift and linewidth enhancement factor change sign, revealing potentially ideal conditions for cross gain modulation.
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