A 2 × 2 Mech-Zehnder thermo-optic switch based on a 250 nm-thick silicon nitride platform is designed and fabricated. The measured excess on-chip loss is 0.3 dB and the extinction ratio is 31 dB.
An on-chip TE-pass polarizer working near 850nm band is designed and fabricated on silicon nitride platform. The structure is very simple, using a straight silicon nitride waveguide separated from a metal strip by a low index silicon oxide spacer layer. By optimizing the thickness of the spacer layer, the metal strip introduces more loss for TM mode than TE mode. The measured extinction ratio of the fabricated device is around 20dB over a 16nm wavelength range from 837nm to 853nm for a 3mm-long polarizer.
We propose a simple and effective model to properly design the monolithically integrated tunable optical transmitter based on the traveling wave Mach-Zehnder modulator (TW-MZM) and V-cavity laser (VCL). Firstly, the integrated structure of TW-MZM and VCL is presented. Then we put forward a TW-MZM model to design and improve the performance of the electro-optic (EO) modulation bandwidth of the optical transmitter. By changing the structural parameters of the optical waveguide and the traveling wave electrodes, we reduce the microwave transmission loss from 3 mm-1 to 0.6 mm-1 at 20 GHz and thus increase the theoretical electro-optic response from 13.5 GHz to 52.8 GHz. Due to the high modulation efficiency from the Quantum Confined Stark Effect (QCSE) in quantum wells, the traveling wave modulator is very compact with a length of only 600 μm.
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