Dr. Thoralf R. Gebel Profile

Dr. Thoralf R. Gebel

Chief Executive Officer at DTF Technology GmbH

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Proceedings Article | 15 September 2004 Paper

Fabrication and evaluation of efficient light emitters comprising nanocluster-rich SiO2 layers

Rossen Yankov, Thoralf Gebel, Lars Rebohle, Thomas Trautmann, Wolfgang Skorupa, Guenter Gauglitz, Ruediger Frank

Proceedings Volume 5450, (2004) https://doi.org/10.1117/12.545402

KEYWORDS: Electroluminescence, Silicon, Germanium, Oxides, Annealing, Light emitting diodes, Plasma treatment, Electrodes, Plasma, Sensors

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We have demonstrated the feasibility of obtaining intense blue-to-violet electroluminescence (EL) from silicon-based light-emitting structures at room temperature (RT), in line with the need for efficient and inexpensive light sources whose production is compatible with existing silicon device technology. Ion-beam synthesis (IBS) and standard silicon processing have been used to fabricate light-emitting diodes whose active medium is a layer of thermal SiO₂ containing germanium nanocrystals. Extensive research has been carried out in three main directions: optimization of the fabrication process, improvement in the device lifetime, and elucidation of the underlying mechanisms of light emission and charge injection/charge transport. This research effort has resulted in the establishment of a set of optimum conditions for the formation of improved-quality Si-based light emitters. It has been shown that the use of plasma treatement is helpful in increasing device lifetime. Issues related to the nature and the excitation of the light-emitting centers have been considered. Finally, the utility of such light-emitting devices in the development of integrated optoelectronic devices as well as Lab-on-a-Chip, microarray and sensor systems has been outlined.

Proceedings Article | 7 April 2004 Paper

Nanocluster-rich silicon dioxide layers: electroluminescence and charge trapping

Thoralf Gebel, Lars Rebohle, Rossen Yankov, Alexi Nazarov, Wolfgang Skorupa

Proceedings Volume 5445, (2004) https://doi.org/10.1117/12.560661

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Integrated optoelectronic devices are expected to become a key component of the future microelectronic and communication technology. This has led to great interest in the development of silicon-based light emitters. One of the most promising techniques for fabricating such emitters uses ion-beam synthesis (IBS) to form semiconductor nanoclusters in a layer of thermally-grown silicon dioxide. Following the preparation of metal-oxide-semiconductor (MOS) structures incorporating nanocluster-rich oxide layers, blue-to-violet electroluminescence (EL) has been observed at room temperature (RT) for implants using germanium ions and heat treatments involving furnace and/or rapid thermal processing. The power efficiency of the EL is quite high, up to 5 x 10^-3, making the blue/violet light emission visible with the naked eye. It has been proven that light emission is caused by one and the same luminescent center. The microstructure of the ion-implanted and annealed oxide layers has been characterized by cross-sectional transmission electron microscopy (XTEM). The presence of second-phase nanoclusters has been found to modify considerably the charge injection and charge transport in the oxide. The optical properties of the nanocluster-rich oxide layers have been correlated with the process of charge trapping using a combination of current-voltage (I/V) and capacitance-voltage (C/V) measurements. The results obtained have enabled the nature of the EL to be elucidated. Finally, opto- and microelectronic application aspects are outlined.

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