Impedance characteristics of semiconductor barrier-injection transit-time diodes (BARITT) structures made of Silicon Carbide containing quantum wells in the drift region are theoretically examined. It is shown that the magnitude of the negative dynamic resistance can be increased due to trapping and escape effects of injected charge carriers in quantum wells. It is shown that the negative resistance of the BARITT structure made of different polytypes of SiC is one order of magnitude higher in absolute value in comparison with the Si structure, all other factors being equal. In the proposed structure significantly higher operation frequencies can be realized in comparison with usual BARITT'S.
In this reference processes in a high temperature superconducting (HTSC) thin film circuit with nonlinear parametric resistance and inductance are theoretically examined. The fact that the active and reactive components of the impedance of HTSC film are modulated by the law of optical signal is accepted as a basic precondition for this discussion. By the analogy with the Josephson phenomenon we give certain phases for superconducting and normal states and accept that the alternating components of the photocurrent IPhi and photovoltage U created by the radiation can be presented as a phase difference between superconducting and normal states respectively. Based on this, the equation for the equivalent circuit of the film presents a complicated differential heterogeneous equation of second rank. As a particular state of the homogeneous equation has been investigated and the Mathieu equation has been obtained. In a result the expression for the gain in power is obtained, which depends on the parameters of the optical signal and thin film. The possibility to control the gain in power by the selection of various values of the depth of modulation of the active and reactive components of the surface impedance, the intensity of radiation and other parameters of the HTSC film is shown.
Processes in a high temperature superconducting thin film circuit with nonlinear active resistance and inductances are theoretically examined. A possibility to control values of equivalent parameters of the circuit by optical radiation modulated on the intensity is shown.
The impedance and noise characteristics of a semiconductor punch-through structure are theoretically examined for an operation under a condition when quantum wells (QWs) are present in the transit-time region of the structure. It is shown that the magnitude of the negative dynamic resistance can be increased under the influence of the trapping and escape effects of injected carriers by quantum wells. It is expected that the structure proposed have significantly higher operation frequencies in comparison with usual barrier-injection transit-time diode. It is shown also that the noise measure decreased under an influence injected charge carriers captured by QWs with the increase of the ration of the emission time of electrons emitted out of QWs due to the thermal excitation to the capture time of free charge carriers. The frequency band where this phenomenon takes place is narrowed and displaced to a lower frequency range.
Processes in a modulation amplifier on a high temperature superconducting film with nonlinear parametric inductance and active resistance are theoretically examined. The expression is obtained in this paper for the average power on the inductance. A possibility of a parametric regeneration on the modulation frequency of the surface impedance of a HTSC film offers at the irradiation of the latter by an optical radiation modulated on the intensity.
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