Dr. Vincent Senez Profile

Dr. Vincent Senez

at Univ of Tokyo

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Proceedings Article | 30 March 2004 Paper

Numerical analysis of the process-induced stresses in silicon microstructures

Vincent Senez, Thomas Hoffmann, Aldo Armigliato, Ingrid De Wolf

Proceedings Volume 5274, (2004) https://doi.org/10.1117/12.524228

KEYWORDS: Silicon, Silicon films, Oxides, Temperature metrology, Raman spectroscopy, Calibration, Thin films, Crystals, Thermal modeling, Oxidation

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Residual stresses can significantly affect the performances of silicon micro-structures. The understanding of the residual stress growth during their processing is of great importance. However, the experimental tracing of the stress at the various stages of the machining is still almost impossible. Quantitative modelling of these problems is the alternative to provide guidelines for the minimization of the residual stresses. In this paper, we describe a technology computer aided design homemade tool, IMPACT. The mechanical models and the numerical implementation are presented. We give details about our methodology to calibrate and validate our implementation. The originality of this study lies in (1) the capability to simulate almost all the sources of stress taking into account of the complex rheological behaviors of the materials, (2) the experimental determination of the mechanical properties of various thin film materials and (3) the validation of the calculations by direct comparisons with measured deformations in the micro-structures.

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