The progress of modern nanoelectronics, optoelectronics, nanophotonics, and microoptics is determined mainly by
nanolithography advances. The electron beam lithography tools possessing a few nanometers resolution and good
flexibility have a good outlook for creation of devices of this type. From the electron beam lithography tools only tools
with sharp focused beam may be used for pattern generation over nanoscale area, but the writing speed thereof may
decrease dramatically as the beam diameter d is reduced as d--6 over this area. The theoretical analysis showed that the
application of electron beam monochromator could not only improve resolution, but increase also the beam current over
the minimum diameter area. Numerical modeling of heating process under scanning by electron beam is performed also
to fit the electron lithography systems and scanning electron microscopy. Areas of safe work with sensitive to heating
samples are determined. A conditions and prospects of development of the various electron beam lithography systems
are considered. The achievements of electron beam lithography are compared with success in the field of other
lithography techniques.
A number of modern techniques for microelectronics, microoptics, optoelectronics, and micromechanics are required the lithography of objects presented big arrays of nanoscale structures of the complicated form. The electron beam lithography tools with Gaussian vector scan beam and the projection electron lithography systems (SCALPEL and LEEPL), having a few nanometers resolution, good flexibility, and large work field, have a good outlook for creation of devices of this class. Only the first may be used for direct writing. But the writing speed may decrease dramatically with reducing of beam diameter d as d-6 in some case. Increasing the resolution of electron beam-resist system and the throughput are the important problems in this case. The paper is directed on development of theory and strategy of electron beam lithography for its application in the nanometer length scale. The achievements of electron beam lithography are compared with success in the field of optical and x-ray lithography.
We have studied morphine action on mobility and structure of water by means of fluorescent investigations and light scattering analysis. Wave-like concentration dependences have been plotted in the both cases. Theoretical description of the discovered effect has been made based on the formalism of N.N.Bogolubov.
The power semiconductor device made by employment of electron- beam lithography is considered. The ZBA-21 tool with modified data system was applied for lithography. Our exposure strategy was developed for increase of writing speed. The analytical solution for the optimum beam size was obtained, and the lower limit of maximum beam size has been calculated for layouts of power semiconductor devices. A new translation program dividing layout on standard figures was used. At the output this program gives the rectangles having widths with divisible sizes. The maximum beam size is chosen as greater common divisor of these sizes. This strategy permits to use the beam current more effectively, to decrease waste time on dynamic focusing, and to smooth the temperature field. The making of static induction thyristor by employment of electron-beam lithography is cited as an example. The reproducibility of element's sizes on wafer has been investigated.
Modern technologies for power semiconductor devices, laser and micro optics, micromechanics requires microlithography of patterns having a large are up to 100 cm2 with complicate precise drawing. The electron beam lithography (EBL) tools with variable shape beam have good prospects for this purpose, but their application has a few problems in case of the tasks pointed above. The main problems are a great volume of information and a large exposure time of such patterns. We propose the system for preparation of the exposure data having more than 100 MB volume that consists from set of personal computers, network adapters, and software. The preparation of graphic information and exposure strategy are presented. The optimum exposure conditions are determined by program modeling the exposure process in dependence on the statistic distribution of sizes of EBL figures. Our method permits to decrease the exposure time in several times under certain conditions and brings that nearer to theoretical limit Tmin equals SD/IBmax, where Tmin is minimum exposure time, S is exposure area, D is dose density, IBmax is maximum beam current. This approach is valid if the basic factor limiting the writing speed is IBmax. The developed computer system and writing strategy was applied us for mask making on modified ZBA-21 tool. These masks were meant for production of power semiconductor and laser optics devices.
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