Dr. Wei Sun Profile

Dr. Wei Sun

at Hitachi, Ltd.

SPIE Involvement:

Author

Publications (7)

Proceedings Article | 10 April 2024 Presentation + Paper

Detection of crystalline defects in Si/SiGe superlattices towards 3D-DRAM applications

M. Beggiato, D. Cerbu, R. Loo, W. Sun, A. Moussa, G. Bast, K. Fukaya, C. Beral, A.-L. Charley, N. Janardan, A. Cross, G. Lorusso, M. Isawa, A. Belmonte, G. Sankar Kar, J. Bogdanowicz

Proceedings Volume 12955, 129551F (2024) https://doi.org/10.1117/12.3011279

KEYWORDS: Semiconducting wafers, Optical inspection, Inspection, Crystals, Sampling rates, Laser phosphor displays, Superlattices, Optical testing, Defect detection, Signal processing

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Si/SiGe heterostructures are gaining traction as a starting template in applications such as Gate-All-Around Field-Effect Transistor (GAAFET), complementary FET (CFET), and 3-dimensional dynamic random access memory (3D-DRAM), where the SiGe alloy plays the role of sacrificial material for channel release. However, the formation of crystalline defects (e.g. crosshatch) in the epitaxially grown layers plays a critical part in determining the overall device performance. As such, it is key to be able to control the defectivity level using large surface area inspection techniques. The challenge of such inspection is that it must combine a high enough throughput to detect low-density defects together with sensitivity to nanometer size defects. In addition, the technique should also be able to distinguish these elongated one-dimensional crystalline defects from other types of defects. In this study, we investigate the impact of the number of Si/SiGe bilayers on the crystal defect distribution utilizing a combined approach of optical inspection and extensive e-beam review for both qualitative and quantitative defect characterization. In-line optical inspection techniques revealed that the crosshatch density and distribution varied significantly with the number of Si/SiGe bilayers. These observations were then confirmed by high-resolution e-beam review coupled with image analysis and signal processing to enable crosshatch quantification. Our approach considers an initial investigation on thin Si/SiGe bilayers (up to ~5x bilayers) and is further extended to thick stacks (up to 60x bilayers) to evaluate the capability of optical inspection as the high-throughput reference technique. In conclusion, this study aims to develop a methodology to investigate the crosshatch density in Si/SiGe superlattices, using optical inspection and e-beam review as main characterization tools. These techniques offer valuable insights in terms of defect distribution at the wafer level for the design and fabrication of next-generation semiconductor devices.

Proceedings Article | 10 April 2024 Poster + Paper

Defect inspection methodology for contact holes

D. Van den Heuvel, C. Beral, B. Chowrira, P. Foubert, D. De Simone, G. Lorusso, M. Beggiato, S. Das, A. Charley, M. Sugie, N. Ban, H. Koike, M. Isawa, W. Sun

Proceedings Volume 12955, 129553S (2024) https://doi.org/10.1117/12.3015844

KEYWORDS: Semiconducting wafers, Inspection, Extreme ultraviolet, Metrology, Light sources and illumination, Stochastic processes, Etching, Defect inspection, Transmission electron microscopy

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Proceedings Article | 27 April 2023 Presentation + Paper

In-line metrology for vertical edge placement control of monolithic CFET using CD-SEM

Wei Sun, Ayumi Doi, Miki Isawa, Victor Vega Gonzalez, Zsolt Tokei, Gian Lorusso

Proceedings Volume 12496, 124961V (2023) https://doi.org/10.1117/12.2656471

KEYWORDS: Transmission electron microscopy, Semiconducting wafers, Metrology, Etching, Monte Carlo methods, Critical dimension metrology, Calibration, Wafer bonding, Signal intensity, Optical lithography

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Proceedings Article | 22 February 2021 Presentation + Paper

Evaluation of deep learning model for 3D profiling of HAR features using high-voltage CD-SEM

Wei Sun, Yasunori Goto, Takuma Yamamoto, Keiichiro Hitomi

Proceedings Volume 11611, 116110X (2021) https://doi.org/10.1117/12.2592052

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SPIE Journal Paper | 12 May 2020 Open Access

High-voltage CD-SEM-based application to monitor 3D profile of high-aspect-ratio features

Wei Sun, Hiroya Ohta, Taku Ninomiya, Yasunori Goto

JM3, Vol. 19, Issue 02, 024002, (May 2020) https://doi.org/10.1117/12.10.1117/1.JMM.19.2.024002

KEYWORDS: 3D metrology, 3D applications, Monte Carlo methods, Cadmium, Solids, Scanning electron microscopy, Critical dimension metrology, Signal detection, Semiconducting wafers, Metrology

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Proceedings Article | 20 March 2020 Presentation + Paper

Accuracy improvement of 3D-profiling for HAR features using deep learning

Wei Sun, Pushe Zhao, Yasunori Goto, Takuma Yamamoto, Taku Ninomiya

Proceedings Volume 11325, 113250N (2020) https://doi.org/10.1117/12.2551458

KEYWORDS: 3D modeling, Electron beams, Data modeling, Neural networks, Scanning electron microscopy, Inverse problems, Convolution, 3D metrology

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Proceedings Article | 26 March 2019 Presentation + Paper

High voltage CD-SEM based metrology for 3D-profile measurement using depth-correlated BSE signal

Wei Sun, Yasunari Sohda, Hiroya Ohta, Taku Ninomiya, Yasunori Goto

Proceedings Volume 10959, 1095915 (2019) https://doi.org/10.1117/12.2511272

KEYWORDS: Monte Carlo methods, 3D metrology, Critical dimension metrology, Metrology, Scanning electron microscopy, Etching, Scattering, Electron beams

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Showing 5 of 7 publications

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