This article proposes a two-dimensional material layer determination and mapping method based on high-precision confocal Raman spectroscopy. It achieves nanometer-level axial focusing accuracy, and the lateral resolution of Raman spectroscopy is better than 600 nm. Compared with non-confocal Raman systems, laser confocal Raman systems can accurately determine the number of layers of molybdenum disulfide materials within 10 layers, significantly improving the accuracy of layer determination and spectral imaging stability of existing Raman imaging techniques for two-dimensional materials. This method provides a scientific basis for the design and performance optimization of semiconductor devices.
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