Hg1-xCdxTe (MCT) Photovoltaic Detector is a very important detector for the second-Generation and third-Generation
infrared Focal Plane Array (FPA) detectors. Zero-bias resistance-area products (R0A) is an important factor of detector's
performance whose value is determined by the dark current of photovoltaic detector. In this paper, with Synopsys device
simulation software, both current-voltage characteristic and R0A products of n-on-p MCT Photovoltaic Detector with x =
0.223 had been simulated and analyzed with varying implantation dose and working temperature in the voltage range of
-0.3V~0V. The stimulated results indicated that dark current and R0A products depended distinctly upon the doping
concentration and working temperature of photovoltaic detectors, and the optimal doping concentration and appropriate
working temperature were obtained for n-on-p MCT Photovoltaic Detector.
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