Dr. Yang Y. Ping Profile

Dr. Yang Y. Ping

Member of Technical Staff

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Publications (5)

Proceedings Article | 18 March 2015 Paper

Hybrid OPC flow with pattern search and replacement

Piyush Verma, Shikha Somani, Yang Ping, Piyush Pathak, Rani Ghaida, Carl Babcock, Fadi Batarseh, Jingyu Wang, Sriram Madhavan, Sarah McGowan

Proceedings Volume 9426, 942611 (2015) https://doi.org/10.1117/12.2087094

KEYWORDS: Optical proximity correction, Photomasks, SRAF, Photovoltaics, Model-based design, Very large scale integration, Optical lithography, Data modeling, Image classification, Library classification systems

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Proceedings Article | 31 March 2014 Paper

Process window enhancement using advanced RET techniques for 20nm contact layer

Yang Ping, Sarah McGowan, Ying Gong, Yee Mei Foong, Jian Liu, Jianhong Qiu, Vincent Shu, Bo Yan, Jun Ye, Pengcheng Li, Hui Zhou, Taksh Pandey, Jiao Liang, Chris Aquino, Stanislas Baron, Sanjay Kapasi

Proceedings Volume 9052, 90521N (2014) https://doi.org/10.1117/12.2048513

KEYWORDS: Optical proximity correction, SRAF, Source mask optimization, Resolution enhancement technologies, Molybdenum, Photomasks, Electroluminescence, Astatine, Printing, Neodymium

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Proceedings Article | 23 March 2011 Paper

Tolerance-based OPC and solution to MRC-constrained OPC

Yang Ping, Xiaohai Li, Stephen Jang, Denny Kwa, Yunqiang Zhang, Robert Lugg

Proceedings Volume 7973, 79732M (2011) https://doi.org/10.1117/12.879947

KEYWORDS: Optical proximity correction, Tolerancing, Lithography, Image segmentation, Critical dimension metrology, Photomasks, Lithographic illumination, Detection and tracking algorithms, Laser induced breakdown spectroscopy, Roads

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Proceedings Article | 25 September 2010 Paper

Optical proximity correction challenges with highly elliptical contacts

Chris Cork, Levi Barnes, Yang Ping, Xiaohai Li, Stephen Jang

Proceedings Volume 7823, 78233R (2010) https://doi.org/10.1117/12.867247

KEYWORDS: Optical proximity correction, Photomasks, Calibration, Manufacturing, Semiconducting wafers, Tolerancing, Diffraction, Image processing, Critical dimension metrology, Immersion lithography

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The steady march of Moore's law demands ever smaller feature sizes to be printed and Optical Proximity Correction to correct to ever tighter dimensional tolerances. Recently pitch doubling techniques has relieved the pressure on CD reduction, which instead of being achieved lithographically are reduced by subsequent etching or chemical interaction with spin-on layers. CD tolerance reductions, however, still need to match the overall design rule shrinkage. The move to immersion lithography, where effective Numerical Apertures now reach 1.35, has been accompanied by a significantly reduction in depth of focus, especially on isolated contacts. To remedy this, RET techniques such as assist feature placement, have been implemented. Certain local placements of assist features and neighboring contacts are observed to result in highly elliptical contacts being printed. In some layouts small changes in the aspect ratio of the contact on the mask leads to strong changes in the aspect ratio of the printed contact, whereas in other layouts the response is very weak. This effect can be described as an aspect ratio MEEF. The latter type of contact can pose a significant challenge to the OPC recipe which is driven by the need to place the printed contour within a small range of distance from target points placed on the midpoint of edges of a nominally square contact. The OPC challenge naturally will be compounded when the target layout is rectangular in the opposite sense to the natural elliptical shape of the printed contact. Approaches to solving this can vary from intervening at the assist feature placement stage, at the possible loss of depth of focus, to accepting a certain degree of ellipticity in the final contour and making the OPC recipe concentrate on minimizing any residual errors. This paper investigates which contact layouts are most challenging, discusses the compromises associated with achieving the correction target and results are shown from a few different approaches to resolving these issues.

Proceedings Article | 4 March 2010 Paper

Improvement in process window aware OPC

Xiaohai Li, Yasushi Kojima, Hironobu Taoka, Akemi Moniwa, Matt St. John, Yang Ping, Randall Brown, Robert Lugg, Sooryong Lee

Proceedings Volume 7640, 76402O (2010) https://doi.org/10.1117/12.849904

KEYWORDS: Optical proximity correction, Lithography, Model-based design, Optical lithography, Process modeling, Roads, Lithographic illumination, Photomasks, Immersion lithography, Semiconductor manufacturing

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