As mobile technology evolves from 5G to 6G, the demand for third-generation semiconductors such as SiC with higher power and frequency capabilities is increasing. Silicon Carbide power modules generate significant heat during operation, requiring large-area nano-silver sintering technology to improve module performance and reliability. However, in large-area sintering processes, low exhaust efficiency of solder paste by-products and uneven sintering pressure of the nano-silver paste result in poor sintering quality of the silver layer. This study aims to improve the sintering quality of interconnected silver layers by optimizing the sintering pressure distribution and adding rubber spacers to the sintering structure. ABAQUS was used to quantitatively analyze the effects of pressure methods and gasket material, diameter, and thickness on the stress distribution in the silver layer. Finally, based on the simulation results, an optimized sintering structure was proposed to unify the pressure and reduce the stress concentration in the silver layer, and verified experimentally by sintering tests. Compared with the traditional sintering structure, the application of a 2 mm thick fluoro rubber gasket with the same surface area as the silver layer in the optimized structure reduced the porosity to 2.15% and achieved a more dense sintered silver layer.
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