Small signal circuit modeling for semiconductor self-assembled quantum dot laser

Ashkan Horri; Rahim Faez

doi:10.1117/1.3554394

1 March 2011 Small signal circuit modeling for semiconductor self-assembled quantum dot laser

Ashkan Horri, Rahim Faez

Author Affiliations +

Optical Engineering, Vol. 50, Issue 3, 034202 (March 2011). https://doi.org/10.1117/1.3554394

Abstract

In this paper, for the first time, we present a small signal circuit model of InGaAs/GaAs self-assembled quantum dot (QD) laser, based on the standard rate equations. By using the presented model, modulation response of QD laser is investigated. The simulation results show that retarded carrier relaxation due to phonon bottleneck degrades the modulation and impulse responses of a QD laser. It is shown that modulation bandwidth is increased with larger inhomogeneous broadening. Also, our model describes the effects of carrier recombinations inside and outside of a QD region, on the modulation response behavior.

©(2011) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Ashkan Horri and Rahim Faez "Small signal circuit modeling for semiconductor self-assembled quantum dot laser," Optical Engineering 50(3), 034202 (1 March 2011). https://doi.org/10.1117/1.3554394

Published: 1 March 2011

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