Paper
16 March 2011 Integration of an amorphous silicon passive pixel sensor array with a lateral amorphous selenium detector for large area indirect conversion x-ray imaging applications
Author Affiliations +
Abstract
Previously, we reported on a single-pixel detector based on a lateral a-Se metal-semiconductor-metal structure, intended for indirect conversion X-ray imaging. This work is the continuous effort leading to the first prototype of an indirect conversion X-ray imaging sensor array utilizing lateral amorphous selenium. To replace a structurally-sophisticated vertical multilayer amorphous silicon photodiode, a lateral a-Se MSM photodetector is employed which can be easily integrated with an amorphous silicon thin film transistor passive pixel sensor array. In this work, both 2×2 macro-pixel and 32×32 micro-pixel arrays were fabricated and tested along with discussion of the results.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kai Wang, Mohammad Y. Yazdandoost, Rasoul Keshavarzi, Kyung-Wook Shin, Christos Hristovski, Shiva Abbaszadeh, Feng Chen, Shaikh Hasibul Majid, and Karim S. Karim "Integration of an amorphous silicon passive pixel sensor array with a lateral amorphous selenium detector for large area indirect conversion x-ray imaging applications", Proc. SPIE 7961, Medical Imaging 2011: Physics of Medical Imaging, 79610V (16 March 2011); https://doi.org/10.1117/12.877592
Lens.org Logo
CITATIONS
Cited by 6 scholarly publications and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Sensors

X-ray imaging

Amorphous silicon

Selenium

Blue light emitting diodes

Thin films

Capacitors

Back to Top