Electric and magnetic field effects on the magnetostrictive thin film for MEMS

Heung-Shik Lee; Chongdu Cho; Dae-Seok Shin; Sung Pil Chang

doi:10.1117/1.3196431

1 July 2009 Electric and magnetic field effects on the magnetostrictive thin film for MEMS

Heung-Shik Lee, Chongdu Cho, Dae-Seok Shin, Sung Pil Chang

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 8, Issue 3, 039701 (July 2009). https://doi.org/10.1117/1.3196431

Abstract

We present the control of magnetostriction and magnetization of the magnetostrictive thin film via additional electric field with original low magnetic field for microelectromechanical systems (MEMS) application. To examine the electric field effect on the magnetostrictive thin film deposited on each substrate, Si and polyimide (Kapton, Dupont Corp.) substrates are used. During the measurement of magnetization and magnetostriction, 0-to 50-V electric fields are applied under 0.5-T magnetic fields. As a result, 3% of magnetostriction is enhanced compare with no electric field.

©(2009) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Heung-Shik Lee, Chongdu Cho, Dae-Seok Shin, and Sung Pil Chang "Electric and magnetic field effects on the magnetostrictive thin film for MEMS," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(3), 039701 (1 July 2009). https://doi.org/10.1117/1.3196431

Published: 1 July 2009

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