KEYWORDS: Resistors, Sensors, Resistance, Temperature metrology, Time metrology, Reliability, Micromachining, Metals, Photoresist materials, Temperature sensors
Resistive temperature detectors (RTDs) are widely used to monitor and control the temperature of work environments due to their higher sensitivity, excellent reliability and stability, and very linear output signal compared to other types of temperature detectors. However, RTDs have some shortcomings, including a slow response time. A nickel-based RTDs were designed, fabricated, and characterized in order to achieve faster response times. We used micromachining processes to analyze devices with different resistor thicknesses, distances between resistor lines, and resistor line widths. The response times of the RTDs were measured to be between 7.5104 and 23.4583 s. From these measurement data, we can conclude that thinner RTDs with larger surface areas show improved response times.
This paper describes the design, fabrication, and characterization of a capacitive humidity sensor with water vapor inlet holes of different depths. The humidity sensors were composed of a SiO2 insulation layer, a bottom electrode, a polyimide (PI) sensing layer, and a top electrode containing water vapor inlet holes. The sensors were 3.5 mm×3.5 mm with a 0.7-μm thick PI-based sensing layer. A humidity sensor with a partially etched PI layer in the water vapor inlet holes had the following characteristics: sensitivity 1500 fF/%RH, hysteresis 0.37%, and a response time of 70 s.
As the demands for the higher data transmission capacity and speed as well as higher integration density grow
throughout the network, much works have being done in order to integrate the Electrical PCB with Optical PCB.
In this paper, among the key technologies to integrate the Electrical PCB with Optical, the technology for getting the
via interconnection line with low resistivity using pulse mode electroplating method and bonding technology for high
bonding strength with low temperature process are studied.
As a result of this study, the measured value of electrical resistivity shows with a range from 20 to 26 mΩ and the
PCB bonding technology with high bonding strength is demonstrated with the value of bonding strength from 7 to 8
MPa.
We present the control of magnetostriction and magnetization of the magnetostrictive thin film via additional electric field with original low magnetic field for microelectromechanical systems (MEMS) application. To examine the electric field effect on the magnetostrictive thin film deposited on each substrate, Si and polyimide (Kapton, Dupont Corp.) substrates are used. During the measurement of magnetization and magnetostriction, 0-to 50-V electric fields are applied under 0.5-T magnetic fields. As a result, 3% of magnetostriction is enhanced compare with no electric field.
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