Dr. Christopher J. Progler Profile

Dr. Christopher J. Progler

Chief Technology Officer at Photronics Inc

SPIE Involvement:

Author

Publications (77)

Proceedings Article | 20 November 2024 Poster + Paper

Poster + Paper

Critical dimension advanced statistical process control closed-loop system in photomask manufacturing

E. Vogiatzis, E. Bawden, J. Beineke, M. Goldberg, D. Kazlauskas, S. Pampel, R. Kutzy, J. Patel, C. Sullivan, H. Küllig, A. Wittig, R. Born, R. Schrader, S. Brosig, D. Paulick, P. Craig, H. Fryer, C. Cooke, G. Davies, L. Kreft, T. Schievelbein, M. Carrier, A. Garman, D. Lucas, M. Barnes, D. Wierzbicki, C. Progler

Proceedings Volume 13216, 132162P (2024) https://doi.org/10.1117/12.3031853

KEYWORDS: Manufacturing, Control systems, Process control, Photomasks, Statistical analysis, Databases, Critical dimension metrology, Advanced process control, Failure analysis, Visualization

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Proceedings Article | 20 November 2024 Poster + Paper

Poster + Paper

Process matching and mask error characterization of standard mask processes using electron beam (EB) mask simulation

Mohamed Ramadan, Young Ham, Juergen Preuninger, Hans-Jurgen Stock, Jirka Schatz, Heath Wheeler, Chris Progler

Proceedings Volume 13216, 1321629 (2024) https://doi.org/10.1117/12.3034705

KEYWORDS: Point spread functions, Monte Carlo methods, Data modeling, Mathematical optimization, Electron beams, Critical dimension metrology, Optical simulations, Manufacturing, Extreme ultraviolet, Error analysis

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Proceedings Article | 12 November 2024 Presentation + Paper

Presentation + Paper

Low-n absorber EUV masks: mask manufacturing assessment through process characterization and optimization with early look at EUV Low-NA and High-NA imaging performance

Henry Kamberian, Jed Rankin, Jinju Beineke, Romain Lallement, Michael Green, Martin Burkhardt, Mohamed Ramadan, Scott Halle, Rajiv Sejpal, Oseo Park, Sriharsha Sudhindra, Chris Progler

Proceedings Volume 13216, 132160C (2024) https://doi.org/10.1117/12.3037087

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Etching, Semiconducting wafers, Electron beam lithography, Optical lithography, Manufacturing, Photoresist processing, Photomask technology

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Industry has made significant progress advancing EUV Lithography technology for the past several years leading to its full adoption starting at N7 node and volume production through N3 node. To extend EUVL technology well into sub-2nm node regime and beyond, a new High NA EUV platform (Hi-NA) is needed and will be introduced. These new Hi-NA scanner platforms will use anamorphic optics with 0.55NA with EUV illumination incidence angle lower from current scanners arriving light of 6° incidence. At mask level, the combination of EUV light at oblique incidence, absorber thickness, and non-uniform mirror reflectance through incidence angle, creates mask-induced imaging aberrations, known as mask 3D effects (M3D). Additionally, these Hi-NA systems introduce mask related imaging complications such as non-telecentricity, which has shown to cause H-V bias due to shadowing, pattern shift through focus, and image contrast loss due to apodization by the reflective mask coatings. All these factors suggest a need for novel EUV mask absorbers, which will reduce these effects. Of the various novel materials, the low refractive index (low-n) absorber materials, characterized as EUVPSM, have received most attention and acceptance. EUVPSM promises to address mask 3D effects while improving wafer image quality with enhanced contrast. In this work, we have embarked on characterization studies to evaluate a EUV low-n absorber material (EUVPSM), which meets EUV mask fabrication requirements for impending 2nm and below advanced semiconductor device nodes. While a number of low-n materials were considered, through simulation and material evaluation the selection was narrowed to one material, which met thickness, PSM phase angle, and EUV reflectivity targets. Characterization consisted of studying mask manufacturing modules including patterning, post-exposure processing, cleaning, defect inspection and repair. In this study, the material was evaluated for critical patterning performance looking at key CD control metrics such as resolution, uniformity, linearity, proximity and LER/LWR. We also characterized pattern fidelity looking at complex mask designs for 2nm node class and beyond using internally developed advanced mask characterization and optimization methodology emphasizing 2D pattern characterization, including sidewall angle (SWA) assessment of patterned absorber and resultant imaging. Another module studied is the EUV Black-Border patterning process which must improve to meet tightening dimensional, placement and EUV reflectivity controls needed for the Hi-NA regime, especially to enable half-field stitching requirements. With a mask manufacturing process established and characterized, EUVPSM mask lithographic performance was evaluated both to validate the simulation models, and to assess overall EUV printability at Low-NA, where the lithography process and tools are more established. Additionally, an early assessment at Hi-NA conditions is planned to examine critical imaging metrics while comparing the EUVPSM to standard Ta-based binary mask absorber, including early assessment of BB process on both mask and wafer.

Proceedings Article | 12 November 2024 Presentation + Paper

Presentation + Paper

Assessing need and methodology for mask constraints in ILT applications

Mohamed Ramadan, Chris Progler, Henry Kamberian, Jinju Beineke, Michael Green, Guangming Xiao, Ming-Feng Shen, Kai-Hsiang Chang, Kyle Braam, Alex Zepka, Yu-Po Tang, Szu Ping Chen, Eric Huang, Gloria Yeh, Nicole Wu, Chun-Cheng Liao

Proceedings Volume 13216, 132161Q (2024) https://doi.org/10.1117/12.3042434

KEYWORDS: Semiconducting wafers, Printing, Vestigial sideband modulation, Photoresist processing, Simulations, Design rules, Chip manufacturing, SRAF, Optical proximity correction, Lithography

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Proceedings Article | 10 April 2024 Presentation

Presentation

Unique needs of multi-beam mask writing as applied in merchant multi-node applications

Christopher Progler

Proceedings Volume PC12956, PC1295607 (2024) https://doi.org/10.1117/12.3012272

KEYWORDS: Metrology, Industrial applications, Virtual reality, Systems modeling, Photomasks, Modeling, Mask making, Manufacturing, Lithography, Industry

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Proceedings Article | 21 November 2023 Presentation + Paper

Presentation + Paper

EUV mask patterning process to enable opaque SRAFs for bright field EUV mask imaging

Michael Green, Scott Halle, Mohamed Ramadan, Romain Lallement, Henry Kamberian, Martin Burkhardt, Jinju Beineke, Jed Rankin, Chris Progler, Steven McDermott

Proceedings Volume 12751, 127510M (2023) https://doi.org/10.1117/12.2689665

KEYWORDS: SRAF, Extreme ultraviolet, Optical lithography, Resolution enhancement technologies, Opacity, Extreme ultraviolet lithography, Optical proximity correction, Line edge roughness, Semiconducting wafers, Printing

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As extreme ultraviolet lithography (EUVL) technology progresses to support more advanced nodes, mask designs are becoming more complex and difficult for mask makers to produce with the required fidelity. Resolution enhancement techniques (RETs) including mask optical proximity correction (OPC) models and the addition of sub-resolution assist features (SRAFs) are now critical technology enablers. Early adopters of EUVL benefited from the resolution improvement provided by the shorter wavelength. To extend the benefits of EUV to smaller technologies and broader applications, SRAFs are valuable tools to maximize the process window for a variety of critical layers which require both bright and dark field imaging. Regardless of mask tone, because of the short wavelength of EUV radiation, very small SRAFs are required, thus patterning SRAFs for EUVL poses significant mask process challenges. E beam exposure and resist characteristics are key factors for important patterning attributes including minimum resolvable size, line edge roughness (LER), corner rounding (CR), and line end shortening (LES). Patterning dark SRAFs for bright field masks involves an additional challenge of overcoming mechanical forces on these small structures that can cause feature toppling or collapse. In this study, we demonstrate a mask process capable of patterning dark SRAFs on mask at line widths below 25nm (4X). We will discuss patterning solutions including innovations in both the physical mask manufacturing processes as well as mask data preparation techniques, such as mask process correction (MPC). We will utilize advanced characterization techniques to evaluate SRAF pattern fidelity on the mask and its predicted impact on wafer printing performance. A process capable of resolving sufficiently small SRAFs enables an on-wafer analysis to validate whether the predicted lithographic benefits can be demonstrated. Finally, we will review the outlook of continued shrinking mask resolution requirements from both a design value and process implementation perspective. The coming challenges for EUV mask makers include supporting not only ever increasing design complexity, but also the introduction of new mask materials, including phase shift masks (PSMs) as part of the overall RET solution.

Proceedings Article | 21 November 2023 Presentation + Paper

Presentation + Paper

Use of advanced data modeling to introduce and extend mask tools serving mainstream application

Mohamed Ramadan, Christopher Progler, Michael Green, Henry Kamberian, Jinju Beineke

Proceedings Volume 12751, 127510I (2023) https://doi.org/10.1117/12.2688168

KEYWORDS: Data modeling, Photomasks, Biomedical applications, Internet of things, Industrial applications, Product engineering, Optical lithography, Medical devices, Manufacturing, Laser applications

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Proceedings Article | 1 December 2022 Poster + Paper

Poster + Paper

The feasibility of alternative blank substrate materials for large-scale FPD mask process and manufacturing

Young Ham, Tooru Suzuki, Akira Uchida, Kei Kurebayashi, Freeman Sung, Robert Bendernagel, Myung Yong Kim, Chris Progler

Proceedings Volume 12293, 122930S (2022) https://doi.org/10.1117/12.2644329

KEYWORDS: Photomasks, Lithography, Manufacturing, Glasses, Transmittance, Quartz, Inspection, Fused quartz, Optical lithography, Optics manufacturing

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Photomask technology has contributed to the capability and productivity of integrated circuit (IC) and flat panel display (FPD) manufacturing with the implementation of masks that have improved process capability, margins and yield including but not limited to advanced binary or multi-tone masks and phase shifting masks. These masks are mainly composed of various chrome and phase shift materials deposited onto very high quality and stable substrates made out of fine grade fused silica materials. However, for large-scale masks like those used in manufacturing masks for FPD lithography, the cost and availability of such high quality substrates can be a prohibitive factor for cost effective production. Moreover, it is possible for some layers of these non-IC, large format applications, such very high performance fused silica substrates may not be necessary to meet the lithographic imaging requirements. Therefore, it seems desirable to understand the properties of alternate substrate materials to see if they might be suitable for improving the cost and availability factors in the large format applications. In this paper, we evaluate the optical and physical properties of various non-standard materials including thermal expansion, transmission, flatness and defectivity to better understand how these parameters might impact the imaging of certain layers. We compare major parameters in the lithography process such as CD, registration, displacement, defect printability and chemical durability related to process performance and variation. Moreover, we characterize defects and their impact on process using a general inspection tool and AIMS to assess the importance of certain defect modes especially of the embedded or inclusion type. Bubbles that occur in glass manufacturing process are analyzed and we attempt to classify the patterning impact using simulation and matching with AIMS. Finally, we draw conclusions on the suitability of these alternate materials to deliver a much lower cost mask solution for use in certain large format imaging applications by considering specifically the flat panel process and performance predictions.

Proceedings Article | 13 June 2022 Presentation

Presentation

Photomasks unmasked: confessions of a recovering lithographer

Christopher Progler

Proceedings Volume PC12051, PC1205102 (2022) https://doi.org/10.1117/12.2615103

KEYWORDS: Photomasks, Semiconducting wafers, Printing, Manufacturing, Mask making, Resolution enhancement technologies, Lithography, Image processing, Extreme ultraviolet

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Proceedings Article | 23 August 2021 Paper

Paper

Model based mask process correction for EUV Mask

Mohamed Ramadan, Brian Dillon, Michael Green, Chris Progler, Young Ham, Ahmad Syukri

Proceedings Volume 11908, 1190804 (2021) https://doi.org/10.1117/12.2601855

KEYWORDS: Process modeling, Photomasks, Extreme ultraviolet, Model-based design, Extreme ultraviolet lithography, Deep ultraviolet, Photoresist processing, Modeling, Logic, Lithography

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Proceedings Article | 20 October 2020 Presentation + Paper

Presentation + Paper

Patterning solutions for NTD contact hole levels in advanced DRAM nodes

Michael Green, Tsu-Wen Huang, Mohamed Ramadan, Hung-Chang Szu, Yeu Dong Gau, Chih-Ying Tsai, Young Ham, Chun-Cheng Liao, Lucien Bouchard, Eric Huang, Wei-Cheng Shiu, Chris Progler

Proceedings Volume 11518, 115180N (2020) https://doi.org/10.1117/12.2574713

KEYWORDS: Photomasks, Optical lithography, Semiconducting wafers, Lithography, Optical proximity correction, Immersion lithography, 193nm lithography, Critical dimension metrology

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Proceedings Article | 23 March 2020 Presentation + Paper

Presentation + Paper

EUVL mask process development and verification using advanced modeling and characterization techniques

Michael Green, Romain Lallement, Mohamed Ramadan, Derren Dunn, Henry Kamberian, Stuart Sieg, Young Ham, Chris Progler

Proceedings Volume 11323, 113230Q (2020) https://doi.org/10.1117/12.2560545

KEYWORDS: Photomasks, Semiconducting wafers, Extreme ultraviolet lithography, Scanning electron microscopy, Line edge roughness, Stochastic processes, Optical proximity correction, SRAF, Metals, Lithography

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Mask technology is key to enabling the progression of advanced IC technology nodes into the realm beyond 7nm node logic. In particular, extreme ultraviolet lithography (EUVL) relies heavily on the mask in order to achieve adequate process window (PW) and final yields. In the EUVL environment, mask process development and verification becomes increasingly more difficult and costly. The mask manufacture costs are driven by multiple factors including significantly more expensive mask blanks and increased ebeam write times. Wafer verification of mask process improvements is very difficult with the relatively low number of early adopters of EUVL and high cost associated with processing non-product wafers with that technology. It is therefore useful for mask manufacturers and wafer lithographers to collaborate to develop low cost mask process screening techniques as a precursor to committing valuable EUV exposure time for final verification. Previously, we demonstrated that by utilizing a toolkit of mask and wafer analytical techniques known as advanced mask characterization and optimization (AMCO) [2], we were able to predict wafer defectivity on 1D and 2D metal structures and optimize a mask process to enable 30nm pitch interconnect in a single exposure step using EUVL [1]. In this study, we use similar methodology to develop a mask process for beyond 7nm node logic contact and via layers. These structures pose a different set of challenges than the metal layer. Contact hole area loss, corner rounding (CR), and mask process-induced x-y error on asymmetric holes must be optimized to deliver the required capability. Additionally, sub-resolution assist features (SRAFs) become relevant at this node. Resolving these on the mask is critical. Here, we describe the development of a mask process to overcome these challenges. We use advanced modeling techniques including AMCO to characterize the process improvements and predict wafer performance. Mask process improvements that are characterized include both physical mask process components as well as write data optimization techniques, i.e. mask process correction (MPC).

Proceedings Article | 26 September 2019 Paper

Paper

Practical lithography hotspot identification using mask process model

Pai Chi Chen, Chain Ting Huang, Shang Feng Weng, Yung Feng Cheng, Young Ham, Colbert Lu, Michael Green, Mohamed Ramadan, Hong Jen Lee, Chris Progler

Proceedings Volume 11148, 111481H (2019) https://doi.org/10.1117/12.2537935

KEYWORDS: Lithography, Photomasks, Process modeling, Optical proximity correction, Semiconducting wafers, Machine learning, Resolution enhancement technologies, Source mask optimization, Critical dimension metrology, Computer simulations

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Proceedings Article | 26 March 2019 Presentation + Paper

Presentation + Paper

EUV mask challenges and requirements for ultimate single exposure interconnects

Chris Progler, Michael Green, Ravi Bonam, Henry Kamberian, Mohamed Ramadan, Derren Dunn, Young Ham, Yohan Choi, Luciana Meli, Nelson Felix, Daniel Corliss, Bryan Kasprowicz

Proceedings Volume 10957, 109570L (2019) https://doi.org/10.1117/12.2515071

KEYWORDS: Photomasks, Semiconducting wafers, Image processing, Extreme ultraviolet lithography, Electron beam lithography, Stochastic processes, Inspection, Line edge roughness, Extreme ultraviolet, Optical proximity correction

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Proceedings Article | 3 October 2018 Paper

Paper

Hotspot analysis and empirical correction through mask and wafer technology harmonization

Yohan Choi, William Chou, Jeffrey Cheng, C. H. Twu, Adder Lee, Chih Hsuan Chao, Hsin Fu Chou, Sweet Chen, James Cheng, Colbert Lu, Josh Tzeng, Jackie Cheng, Hong Jen Lee, Michael Green, Mohamed Ramadan, Young Ham, Chris Progler

Proceedings Volume 10810, 108101K (2018) https://doi.org/10.1117/12.2501427

KEYWORDS: Optical proximity correction, Photomasks, Lithography

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Proceedings Article | 16 October 2017 Presentation + Paper

Presentation + Paper

EUV mask manufacturing readiness in the merchant mask industry

Michael Green, Yohan Choi, Young Ham, Henry Kamberian, Chris Progler, Shih-En Tseng, Tsann-Bim Chiou, Junji Miyazaki, Ad Lammers, Alek Chen

Proceedings Volume 10450, 1045005 (2017) https://doi.org/10.1117/12.2281132

KEYWORDS: Photomasks, SRAF, Extreme ultraviolet, Manufacturing, Optical proximity correction, Extreme ultraviolet lithography, Metals, Inspection, Scanning electron microscopy, Metrology

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As nodes progress into the 7nm and below regime, extreme ultraviolet lithography (EUVL) becomes critical for all industry participants interested in remaining at the leading edge. One key cost driver for EUV in the supply chain is the reflective EUV mask. As of today, the relatively few end users of EUV consist primarily of integrated device manufactures (IDMs) and foundries that have internal (captive) mask manufacturing capability. At the same time, strong and early participation in EUV by the merchant mask industry should bring value to these chip makers, aiding the wide-scale adoption of EUV in the future. For this, merchants need access to high quality, representative test vehicles to develop and validate their own processes. This business circumstance provides the motivation for merchants to form Joint Development Partnerships (JDPs) with IDMs, foundries, Original Equipment Manufacturers (OEMs) and other members of the EUV supplier ecosystem that leverage complementary strengths. In this paper, we will show how, through a collaborative supplier JDP model between a merchant and OEM, a novel, test chip driven strategy is applied to guide and validate mask level process development. We demonstrate how an EUV test vehicle (TV) is generated for mask process characterization in advance of receiving chip maker-specific designs. We utilize the TV to carry out mask process “stress testing” to define process boundary conditions which can be used to create Mask Rule Check (MRC) rules as well as serve as baseline conditions for future process improvement. We utilize Advanced Mask Characterization (AMC) techniques to understand process capability on designs of varying complexity that include EUV OPC models with and without sub-resolution assist features (SRAFs). Through these collaborations, we demonstrate ways to develop EUV processes and reduce implementation risks for eventual mass production. By reducing these risks, we hope to expand access to EUV mask capability for the broadest community possible as the technology is implemented first within and then beyond the initial early adopters.

Proceedings Article | 23 October 2015 Paper

Paper

Mask process matching using a model based data preparation solution

Brian Dillon, Mohamed Saib, Thiago Figueiro, Paolo Petroni, Chris Progler, Patrick Schiavone

Proceedings Volume 9635, 96350T (2015) https://doi.org/10.1117/12.2199273

KEYWORDS: Photomasks, Data modeling, Calibration, Process modeling, Metrology, Critical dimension metrology, Mask making, Data processing, Photoresist processing, Optical proximity correction

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Process matching is the ability to precisely reproduce the signature of a given fabrication process while using a different one. A process signature is typically described as systematic CD variation driven by feature geometry as a function of feature size, local density or distance to neighboring structures. The interest of performing process matching is usually to address differences in the mask fabrication process without altering the signature of the mask, which is already validated by OPC models and already used in production. The need for such process matching typically arises from the expansion of the production capacity within the same or different mask fabrication facilities, from the introduction of new, perhaps more advanced, equipment to deliver same process of record masks and/or from the re-alignment of processes which have altered over time. For state-of-the-art logic and memory mask processes, such matching requirements can be well below 2nm and are expected to reduce below 1nm in near future. In this paper, a data preparation solution for process matching is presented and discussed. Instead of adapting the physical process itself, a calibrated model is used to modify the data to be exposed by the source process in order to induce the results to match the one obtained while running the target process. This strategy consists in using the differences among measurements from the source and target processes, in the calibration of a single differential model. In this approach, no information other than the metrology results is required from either process. Experimental results were obtained by matching two different processes at Photronics. The standard deviation between both processes was of 2.4nm. After applying the process matching technique, the average absolute difference between the processes was reduced to 1.0nm with a standard deviation of 1.3nm. The methods used to achieve the result will be described along with implementation considerations, to help assess viability for model driven data solutions to play a role in future, critical mask matching efforts.

SPIE Journal Paper | 25 June 2013 Open Access

Open Access

Special Section Guest Editorial: Photomasks for EUV Lithography

Christopher Progler, Frank Abboud

JM3, Vol. 12, Issue 02, 021001, (June 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.2.021001

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Process modeling, Instrument modeling, Reflectivity, Defect inspection, Inspection, Mask making, Printing

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The equipment and process development model for extreme ultraviolet (EUV) masks spans international consortia, closely held multiparty alliances, individual user efforts, materials/equipment programs and ad hoc collaborations. Mask integration efforts are also spread widely from captive mask programs driving toward early and specific EUV use cases to more general-purpose efforts typical of broad application foundry or merchant business models. Even specifications for EUV masks remain a dynamically moving target as the reflective and film properties of the mask coupled with incoming illumination obliquity represent a dramatic departure from previous mask technology. Finally, due to the highly sensitive nature of mask technology as the entry point of a chip design into the fab, many teams are understandably reluctant to publish works due to competitive concerns. For these reasons, it seems particularly valuable to aggregate and highlight important work under way to address key issues in EUV mask development. We are therefore grateful to the expert authors who have provided contributions to this special edition in the following critical areas: •Mask defects and inspection often viewed as the most challenging integration module for delivering production-worthy EUV masks; •Mask blanks representing the critical starting point for high-yielding mask fabrication; •Interplay between mask quality and mask printing, which has particular importance for the new emerging patterning system; •Etching of the mask posing special challenges thanks to the unique substrate characteristics. We hope you will be encouraged by the progress and understanding demonstrated in these works for critical parts of the mask infrastructure. Despite the unique challenge of delivering a new mask technology to the industry, it is clear substantial progress is being made toward the end goal. Of course, readers should draw their own conclusions, and, toward that, we urge EUV ecosystem participants to continue adding to the discussion by publishing new works that support a vigorous EUV mask co-learning and technology dialogue.

SPIE Journal Paper | 1 July 2011

Cost-driven mask strategies considering parametric yield, defectivity, and production volume

Kwangok Jeong, Andrew Kahng, Christopher Progler

JM3, Vol. 10, Issue 03, 033021, (July 2011) https://doi.org/10.1117/12.10.1117/1.3633246

KEYWORDS: Photomasks, Reticles, Semiconducting wafers, Critical dimension metrology, Extreme ultraviolet lithography, Manufacturing, Lithography, Inspection, Extreme ultraviolet, Data modeling

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Proceedings Article | 3 April 2010 Paper

Paper

Exploring complex 2D layouts for 22nm node using double patterning/double etch approach for trench levels

Scott Jessen, Steven Prins, James Blatchford, Brian Dillon, Christopher Progler

Proceedings Volume 7641, 76410A (2010) https://doi.org/10.1117/12.848350

KEYWORDS: Metals, Double patterning technology, Photomasks, Etching, Optical lithography, Semiconducting wafers, Lithography, Scanning electron microscopy, Optical proximity correction, Fiber optic illuminators

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Proceedings Article | 11 December 2009 Paper

Paper

Revisiting adoption of high transmission PSM: pros, cons and path forward

Z. Mark Ma, Steve McDonald, Chris Progler

Proceedings Volume 7520, 752017 (2009) https://doi.org/10.1117/12.838246

KEYWORDS: Photomasks, Lithography, SRAF, Quartz, Optical proximity correction, Etching, Critical dimension metrology, Manufacturing, Phase shifts, Lithographic illumination

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Proceedings Article | 16 March 2009 Paper

Paper

Impact of lithography variability on analog circuit behavior

Christopher Progler, Bhaskar Banerjee, M. Haniff, T. Mahzabeen

Proceedings Volume 7275, 72750G (2009) https://doi.org/10.1117/12.816509

KEYWORDS: Lithography, Analog electronics, Transistors, Photomasks, Critical dimension metrology, Oscillators, Mirrors, Error analysis, Manufacturing, Complex systems

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Proceedings Article | 30 October 2007 Paper

Paper

Polarization-induced astigmatism caused by topographic masks

Johannes Ruoff, Jens Timo Neumann, Emil Schmitt-Weaver, Eelco van Setten, Nicolas le Masson, Chris Progler, Bernd Geh

Proceedings Volume 6730, 67301T (2007) https://doi.org/10.1117/12.747039

KEYWORDS: Diffraction, Polarization, Photomasks, Monochromatic aberrations, Binary data, Birefringence, Electromagnetism, Chromium, Commercial off the shelf technology, Reticles

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Proceedings Article | 26 March 2007 Paper

Paper

Process margin improvement using custom transmission EAPSM reticles

J. Buntin, S. Agarwal, B. Rolfson, R. Housley, B. Baggenstoss, E. Byers, C. Progler

Proceedings Volume 6520, 65202D (2007) https://doi.org/10.1117/12.712368

KEYWORDS: Reticles, Resolution enhancement technologies, Image transmission, Nano opto mechanical systems, Semiconducting wafers, Image processing, 193nm lithography, Etching, Lithography, Databases

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Proceedings Article | 21 March 2006 Paper

Paper

High transmission mask technology for 45nm node imaging

Will Conley, Nicoló Morgana, Bryan Kasprowicz, Mike Cangemi, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Wei Wu, Jonathan Cobb, Young-Mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 6154, 615411 (2006) https://doi.org/10.1117/12.659353

KEYWORDS: Photomasks, Polarization, Etching, Plasma etching, Manufacturing, Plasma, Semiconducting wafers, Chromium, Lithography, Chlorine

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Proceedings Article | 20 March 2006 Paper

Paper

The optics of photomasks: from shadowy past to scattered future

Christopher Progler

Proceedings Volume 6154, 615402 (2006) https://doi.org/10.1117/12.663291

KEYWORDS: Photomasks, Resolution enhancement technologies, Scattering, Lithography, Optical proximity correction, Semiconducting wafers, Diffractive optical elements, Lithographic illumination, Phase shifts, Optical components

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Proceedings Article | 15 March 2006 Paper

Paper

EMF simulation with DDM to enable EAPSM masks in 45-nm manufacturing

Patrick Martin, C. Progler, Michael Cangemi, Kostas Adam, George Bailey, Pat LaCour

Proceedings Volume 6154, 61541G (2006) https://doi.org/10.1117/12.659487

KEYWORDS: SRAF, Polarization, Photomasks, Data modeling, Optical proximity correction, Refractive index, Manufacturing, System on a chip, Critical dimension metrology, Resolution enhancement technologies

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Proceedings Article | 15 March 2006 Paper

Paper

High transmission mask technology for 45nm node imaging

Will Conley, Nicoló Morgana, Bryan Kasprowicz, Mike Cangemi, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Wei Wu, Jonathan Cobb, Young-Mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 6154, 61541D (2006) https://doi.org/10.1117/12.659390

KEYWORDS: Photomasks, Polarization, Etching, Plasma etching, Manufacturing, Plasma, Semiconducting wafers, Chromium, Lithography, Chlorine

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Proceedings Article | 15 March 2006 Paper

Paper

Optical properties and process impacts of high transmission EAPSM

Young Mog Ham, Nicolo Morgana, Pierre Sixt, Mike Cangemi, Bryan Kasprowicz, Chris Progler, Pat Martin

Proceedings Volume 6154, 615413 (2006) https://doi.org/10.1117/12.659238

KEYWORDS: Photomasks, Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Lithography, Chromium, Polarization, Image processing, SRAF, Resolution enhancement technologies

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Proceedings Article | 9 November 2005 Paper

Paper

A films based approach to intensity imbalance correction for 65nm node c:PSM

Rand Cottle, Pierre Sixt, Matt Lassiter, Marc Cangemi, Patrick Martin, Chris Progler

Proceedings Volume 5992, 59920J (2005) https://doi.org/10.1117/12.632214

KEYWORDS: Etching, Photomasks, Reticles, Manufacturing, Wet etching, Silica, Lithography, Resolution enhancement technologies, Scattering, Chromium

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Proceedings Article | 9 November 2005 Paper

Paper

Mask design rules (45 nm): time for standardization

Mark Mason, Christopher Progler, Patrick Martin, Young-Mog Ham, Brian Dillon, Robert Pack, Mitch Heins, John Gookassian, John Garcia, Victor Boksha

Proceedings Volume 5992, 59920D (2005) https://doi.org/10.1117/12.633180

KEYWORDS: Photomasks, Manufacturing, Resolution enhancement technologies, Data modeling, Model-based design, Databases, Inspection, Optical proximity correction, Semiconducting wafers, Design for manufacturing

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Time-to-mask (ttm) has been growing exponentially in the subwavelength era with the increased application of advanced RET's (Resolution Enhancement Technology). Not only are a greater number of design/mask layers impacted but more-and-more layers also have more severe restrictions on critical dimension uniformity (CDU) despite operating at a very low k₁ factors necessitating rigorous but practical tolerancing. Furthermore, designs are also more complex, may be built up from blocks spanning different design styles, and occupy increasingly-large Rayleigh field areas. Given these factors and scales, it's no wonder that the cycle time for verification of a design following RET, is growing however it is doing so exponentially and that this is a critical factor impeding ttm. Until an unambiguously interprable and standard Mask Design Rule (MaskDR) set is created, neither the designer nor the mask supplier can reliably verify manufacturability of the mask for the simple reason that ambiguity and inter-rule conflict are at the source of the problem and that the problem increasingly requires cooperation spanning a large ecosystem of tool, IP, and mask suppliers all needing to essentially speak the same language. Since the 130 nm node, Texas Instruments has enforced a strict set of mask rule checks (MRCs) in their mask data preparation (MDP) flow based on MaskDRs negotiated with their mask suppliers. The purpose of this effort has been to provide an a-priori guarantee that the data shipped to the mask shop can be used to manufacture a mask reliably and with high yield both from a mask standpoint and from the silicon standpoint. As has been reported earlier, mask manufacturing rules are usually determined from assumed or experimentally acquired/validated mask-manufacturing limits. These rules are then applied during RET/MDP data treatment to guide and/or limit pattern correction strategies. With increasing RET and low-k₁ lithography challenges, the importance of MRCs compounds. Furthermore, it will be necessary to comprehend certain MRC restrictions in the design flow as well as in the RET and MDP space. While mask tool manufacturers will need to be able specify tools specifications relevant to the MRCs for a particular mask shop flow, software tool suppliers, such as for RET, need to do so as well with tools which comprehend, check for, and enforce MRCs consistently. IDMs, foundaries, mask shops, EDA companies and tool suppliers will need a common language for the discussion on MaskDRs and MRCs in order to reach unambiguous convergence. Experience at Texas Instruments shows that accurate description, specification, and interpretation of MaskDRs and applying the associated MRCs is critical to a successful advanced mask technology strategy. This paper proposes the creation of a standard MaskDR lexicon. The goal of such a lexicon is the standardization of MaskDRs and their definitions such that interested parties from various mask-related disciplines can discuss, negotiate, specify, test and enforce MaskDRs unambiguously. We further propose that this standard be machine readable and directly usable without the necessity for intermediate interpretations. This lexicon would allow the designers, IDMs, foundaries, mask suppliers, and equipment suppliers to unambiguously negotiate and agree upon mask manufacturability requirements for their particular application.

Proceedings Article | 8 November 2005 Paper

Paper

Manufacturability study of masks created by inverse lithography technology (ILT)

Patrick Martin, C. Progler, G. Xiao, R. Gray, L. Pang, Y. Liu

Proceedings Volume 5992, 599235 (2005) https://doi.org/10.1117/12.633200

KEYWORDS: Photomasks, Inspection, Manufacturing, Optical proximity correction, Lithography, Semiconducting wafers, Imaging systems, Metrology, Resolution enhancement technologies, Binary data

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Proceedings Article | 5 November 2005 Paper

Paper

The impact of mask birefringence on hyper-NA (NA>1.0) polarized imaging

Bernd Geh, Donis Flagello, Chris Progler, Patrick Martin, Leonardus Leunissen, Steve Hansen, Wim de Boeij

Proceedings Volume 5992, 599210 (2005) https://doi.org/10.1117/12.637483

KEYWORDS: Birefringence, Photomasks, Polarization, Critical dimension metrology, Pellicles, Reticles, Silica, Semiconducting wafers, Lithography, Optical lithography

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SPIE Journal Paper | 1 July 2005 Open Access

Open Access

Editorial: Polarization and Hyper-NA Lithography

Donis Flagello, Christopher Progler

JM3, Vol. 4, Issue 03, 031101, (July 2005) https://doi.org/10.1117/12.10.1117/1.2044807

Proceedings Article | 28 June 2005 Paper

Paper

Interaction and balance of mask write time and design RET strategies

Yuan Zhang, Rick Gray, O. Nakagawa, Puneet Gupta, Henry Kamberian, Guangming Xiao, Rand Cottle, Chris Progler

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617146

KEYWORDS: Molybdenum, Source mask optimization, Computed tomography, Photomasks, Resolution enhancement technologies, Design for manufacturing, Optical proximity correction, Error analysis, Statistical analysis, Lithography

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Proceedings Article | 28 June 2005 Paper

Paper

Exploring new high speed mask aware RET verification flows

Patrick Martin, Christopher Progler, Young-mog Ham, Bryan Kasprowicz, Rick Gray, James Wiley, Zongchang Yu, Jun Ye

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617366

KEYWORDS: Resolution enhancement technologies, Photomasks, Optical proximity correction, Lithography, Manufacturing, Computer simulations, Semiconducting wafers, Inspection, Data modeling, Optical lithography

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Proceedings Article | 12 May 2005 Paper

Paper

Tunable transmission phase mask options for 65/45nm node gate and contact processing

Bryan Kasprowicz, Will Conley, Young-Mog Ham, Michael Cangemi, Nicolo Morgana, Marc Cangemi, Rand Cottle, Christopher Progler, Wei Wu, Lloyd Litt, Jonathan Cobb, Bernie Roman

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601011

KEYWORDS: Photomasks, Manufacturing, Etching, Plasma etching, Lithography, Chromium, Phase shifts, Reticles, Semiconducting wafers, Sputter deposition

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Proceedings Article | 12 May 2005 Paper

Paper

Layout and source dependent transmission tuning

Chris Progler, Will Conley, Bob Socha, Young Ham

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601770

KEYWORDS: Photomasks, Optimization (mathematics), Logic, Lithography, Phase shifts, Critical dimension metrology, Prototyping, Lithographic illumination, Algorithm development, Manufacturing

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Proceedings Article | 12 May 2005 Paper

Paper

High transmission mask technology for 45nm node imaging

Will Conley, Mike Cangemi, Bryan Kasprowicz, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Mark Smith, Wei Wu, Jonathan Cobb, Rusty Carter, Young-mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601584

KEYWORDS: Photomasks, Image processing, Manufacturing, Image transmission, Lithography, Photoresist materials, Nanoimprint lithography, Image resolution, Semiconductors, 193nm lithography

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Proceedings Article | 12 May 2005 Paper

Paper

The effect of polarized 193nm irradiation on photomask haze formation

Y. Kim, H. Kang, Yuan Zhang, Chuong Tran, Nigel Farrar, Jennifer Qin, Barry Rockwell, H. Cho, Rand Cottle, David Chan, Pat Martin, S. Choi, Chris Progler

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.598913

KEYWORDS: Photomasks, Air contamination, Pellicles, Laser irradiation, Ions, Pulsed laser operation, Chromium, Chromatography, Inspection, Laser scanners

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Proceedings Article | 12 May 2005 Paper

Paper

Investigation of viable approaches to AAPSM intensity imbalance reduction for 65nm lithography

Tejas Jhaveri, Rand Cottle, Yuan Zhang, Christopher Progler

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.593219

KEYWORDS: Manufacturing, Photomasks, Electroluminescence, Etching, Critical dimension metrology, Lithography, Standards development, Phase shifts, Scanning electron microscopy, Optics manufacturing

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Proceedings Article | 12 May 2005 Paper

Paper

The impact of illumination on feature fidelity for CPL mask technology

Jan Kuijten, Arjan Verhappen, Will Conley, Stephan van de Goor, Lloyd Litt, Wei Wu, Kevin Lucas, Bernie Roman, Bryan Kasprowicz, Chris Progler, Robert Socha, Doug van den Broeke, Kurt Wampler, Tom Laidig, Stephen Hsu

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.605481

KEYWORDS: Chromium, Photomasks, Nanoimprint lithography, Phase shifts, Resolution enhancement technologies, Optical proximity correction, Mask making, Semiconductors, Photoresist materials, Manufacturing

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Proceedings Article | 5 May 2005 Paper

Paper

Device and lithography contextual mask rule generation

Young Mog Ham, Brian Dillon, Chris Progler, Kory Goldammer, Zhiziang Jin, Gary Green, R. Scott Mackay, Hitendra Divecha, Victor Boksha, Pat Martin, Mitch Heins, Yuan Zhang, Kurt Davis, Rafik Marutyan, Karen Martirosyan, Sergei Bakarian

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.600730

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, Lithography, Critical dimension metrology, Manufacturing, Resolution enhancement technologies, Electron beam lithography, Mask making, Design for manufacturing

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Proceedings Article | 5 May 2005 Paper

Paper

Correlation analysis of CD-variation and circuit performance under multiple sources of variability

Amir Borna, Chris Progler, David Blaauw

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.604606

KEYWORDS: Critical dimension metrology, Transistors, Lithography, Optical proximity correction, Device simulation, Silicon, Image processing, Cadmium, Photomasks, Computer aided design

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Proceedings Article | 5 May 2005 Paper

Paper

Mask cost analysis via write time estimation

Yuan Zhang, Rick Gray, Seurien Chou, Barry Rockwell, Guangming Xiao, Henry Kamberian, Rand Cottle, Alex Wolleben, Chris Progler

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.598884

KEYWORDS: Data modeling, Optical proximity correction, Photomasks, Computed tomography, Manufacturing, Statistical analysis, Statistical modeling, Resolution enhancement technologies, Error analysis, Inspection

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Proceedings Article | 5 May 2005 Paper

Paper

Design process optimization, virtual prototyping of manufacturing, and foundry-portable DFM

James Hogan, Christopher Progler, Ahmad Chatila, Bert Bruggeman, Mitchell Heins, Robert Pack, Victor Boksha

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.603077

KEYWORDS: Design for manufacturing, Manufacturing, Photomasks, Computer aided design, Electronic design automation, Lithography, Optical lithography, Semiconducting wafers, Silicon, Semiconductors

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We consider modern design for manufacturing (DFM) as a manifestation of IC industry re-integration and intensive cost management dynamics. In that regard DFM is somewhat different from so-called design for yield (DFY) which essentially focuses on productivity (yield) management (that is not to say that DFM and DFY do not have significant overlaps and interactions). We clearly see the shaping of a new "full-chip DFM" infrastructure on the background of the "back to basics" design-manufacturing re-integration dynamics. In the presented work we are focusing on required DFM-efficiencies in a "foundry-fabless" link. Concepts of "virtual prototyping of manufacturing", "design process optimization", and "foundry-portable DFM" models are explored. Both senior management of the industry and leading design groups finally realize the need for a radical change of design styles. Some of the DFM super-goals are to isolate designers from process details and to make designs foundry portable. It requires qualification of designs at different foundries. In their turn, foundries specified and are implementing a set of DFM rules: "action-required", "recommended", and "guidelines" while asking designers to provide netlist and testing information. Also, we observe strong signs of innovation coming back to the mask industry. Powerful solutions are emerging and shaping up toward mask-centered IP as a business. While it seems that pure-play foundries have found their place for now in the "IDM+" model (supporting manufacturing capacity of IDMs) it is not obvious how sustainable the model is. Wafer as a production unit is not sufficient anymore; foundries are being asked by large customers to price products in terms of good die. It brings back the notion of the old ASIC business model where the foundry is responsible for dealing with both random and systematic yield issues for a given design. One scenario of future development would be that some of the leading foundries might eventually transform themselves into IDMs. Another visible trend: some of the manufacturing capacities started to diversify business by providing services for new emerging markets (for example, new energy and medicine applications). Finally it is very unclear what’s going to happen to fabless players. We continue building on the "Think SPICE again!" methodology introduced last year and expanding on previous platforms' discussion. Model expression of DFM, most probably, will be supplied by the equipment suppliers and yield management community. Actual content for a design intent model will be provided by manufacturing. Much like SPICE it describes the behavior and not what the actual measurement in manufacturing is. When the model is available and populated, a design automation solution can be created that will allow a designer to extract, analyze, simulate, and optimize the circuit prior to handoff to manufacturing.

Proceedings Article | 27 January 2005 Paper

Paper

Photomask development for 90-nm technology

Yuan Zhang, Rand Cottle, Scott Mackay, Guangming Xiao, James Unruh, Christopher Progler

Proceedings Volume 5645, (2005) https://doi.org/10.1117/12.570482

KEYWORDS: Photomasks, Manufacturing, Lithography, Chromium, Binary data, Quartz, Semiconductors, Phase shifts, SRAF, Etching

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Proceedings Article | 20 August 2004 Paper

Paper

CPL mask technology for sub-100-nm contact hole imaging

Bryan Kasprowicz, Willard Conley, Lloyd Litt, Douglas Van Den Broeke, Patrick Montgomery, Robert Socha, Wei Wu, Kevin Lucas, Bernard Roman, J. Fung Chen, Kurt Wampler, Thomas Laidig, Christopher Progler, Michael Hathorn

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557755

KEYWORDS: Photomasks, Reticles, Manufacturing, Inspection, Lithography, Image processing, Semiconducting wafers, Quartz, Metrology, Optical lithography

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Proceedings Article | 20 August 2004 Paper

Paper

CPL reticle technology for advanced device applications

Willard Conley, Douglas Van Den Broeke, Robert Socha, Wei Wu, Lloyd Litt, Kevin Lucas, Bernard Roman, Richard Peters, Colita Parker, J. Fung Chen, Kurt Wampler, Thomas Laidig, Erika Schaefer, Jan-Pieter Kuijten, Arjan Verhappen, Stephan van de Goor, Martin Chaplin, Bryan Kasprowicz, Christopher Progler, Emilien Robert, Philippe Thony, Michael Hathorn

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557802

KEYWORDS: Photomasks, Optical proximity correction, Image processing, Reticles, Resolution enhancement technologies, Phase shifts, Mask making, Scanning electron microscopy, Quartz, Binary data

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Proceedings Article | 28 May 2004 Paper

Paper

The application of CPL reticle technology for the 0.045-mm node

Will Conley, Douglas Van Den Broeke, Robert Socha, Wei Wu, Lloyd Litt, Kevin Lucas, Bernard Roman, Richard Peters, Colita Parker, Fung Chen, Kurt Wampler, Thomas Laidig, Erika Schaefer, Jan-Pieter Kuijten, Arjan Verhappen, Stephan van de Goor, Martin Chaplin, Bryan Kasprowicz, Christopher Progler, Emilien Robert, Philippe Thony

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537613

KEYWORDS: Photomasks, Optical proximity correction, Reticles, Image processing, Resolution enhancement technologies, Phase shifts, Mask making, Scanning electron microscopy, Manufacturing, Quartz

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Proceedings Article | 28 May 2004 Paper

Paper

The impact of MEEF through pitch for 120-nm contact holes

Lloyd Litt, Wei Wu, Will Conley, Kevin Lucas, Bernard Roman, Patrick Montgomery, Bryan Kasprowicz, Christopher Progler, Robert Socha, Arjan Verhappen, Kurt Wampler, Erika Schaefer, Pat Cook, Jan-Pieter Kuijten, Wil Pijnenburg

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537437

KEYWORDS: Fiber optic illuminators, Atrial fibrillation, Critical dimension metrology, Resolution enhancement technologies, Photomasks, Semiconducting wafers, Manufacturing, Reticles, Nanoimprint lithography, Binary data

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Proceedings Article | 28 May 2004 Paper

Paper

Defect printability in CPL mask technology

Jan-Pieter Kuijten, Arjan Verhappen, Wil Pijnenburg, Will Conley, Lloyd Litt, Wei Wu, Patrick Montgomery, Bernard Roman, Bryan Kasprowicz, Christopher Progler, Robert Socha, Douglas Van Den Broeke, Erika Schaefer, Pat Cook

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537619

KEYWORDS: Photomasks, Resolution enhancement technologies, Reticles, Manufacturing, Scanning electron microscopy, Semiconductors, Phase shifts, Binary data, Lithography, Semiconducting wafers

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Proceedings Article | 3 May 2004 Paper

Paper

Impact of lithography variability on statistical timing behavior

Christopher Progler, Amir Borna, David Blaauw, Pierre Sixt

Proceedings Volume 5379, (2004) https://doi.org/10.1117/12.537259

KEYWORDS: Lithography, Critical dimension metrology, Monte Carlo methods, Error analysis, Optical proximity correction, Photomasks, Statistical analysis, Tolerancing, Manufacturing, Device simulation

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Proceedings Article | 17 December 2003 Paper

Paper

Toward large-area simulation of e-beam lithography

Martin Bohn, Ulrich Hofmann, Wolfgang Hoppe, Christopher Progler, Michael Ryzhoukhin

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.520812

KEYWORDS: Optical proximity correction, Electron beam lithography, Monte Carlo methods, Photomasks, Mathematical modeling, Mask making, Lithography, Computer simulations, Optical lithography, Algorithm development

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Proceedings Article | 2 July 2003 Paper

Paper

Cost-effective strategies for ASIC masks

Dipankar Pramanik, Henry Kamberian, Christopher Progler, Michael Sanie, David Pinto

Proceedings Volume 5043, (2003) https://doi.org/10.1117/12.485280

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Reticles, Optical proximity correction, Manufacturing, Dysprosium, Inspection, Critical dimension metrology, Defect inspection

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Proceedings Article | 26 June 2003 Paper

Paper

Process, design, and optical proximity correction requirements for the 65nm device generation

Kevin Lucas, Patrick Montgomery, Lloyd Litt, Will Conley, Sergei Postnikov, Wei Wu, Chi-Min Yuan, Marc Olivares, Kirk Strozewski, Russell Carter, James Vasek, David Smith, Eric Fanucchi, Vincent Wiaux, Geert Vandenberghe, Olivier Toublan, Arjan Verhappen, Jan Kuijten, Johannes van Wingerden, Bryan Kasprowicz, Jeffrey Tracy, Christopher Progler, Eugene Shiro, Igor Topouzov, Karl Wimmer, Bernard Roman

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485498

KEYWORDS: Reticles, Optical lithography, Optical proximity correction, Lithography, 193nm lithography, Scanners, Logic, Optical design, Lithographic illumination, SRAF

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Proceedings Article | 26 June 2003 Paper

Paper

Critical evaluation of photomask needs for competing 65-nm node RET options

Christopher Progler, Guangming Xiao

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485439

KEYWORDS: Photomasks, Resolution enhancement technologies, Error analysis, Lithography, Monte Carlo methods, Tolerancing, Calibration, Data modeling, Edge roughness, Critical dimension metrology

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Proceedings Article | 26 June 2003 Paper

Paper

Application of CPL reticle technology for the 65- and 50-nm node

Will Conley, Douglas Van Den Broeke, Robert Socha, Wei Wu, Lloyd Litt, Kevin Lucas, Carla Nelson-Thomas, Bernard Roman, J. Fung Chen, Kurt Wampler, Thomas Laidig, Stephen Hsu, Erika Schaefer, Shawn Cassel, Linda Yu, Bryan Kasprowicz, Christopher Progler, John Petersen, David Gerold, Mark John Maslow

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485515

KEYWORDS: Photomasks, Reticles, Optical proximity correction, Image processing, Resolution enhancement technologies, Manufacturing, Phase shifts, Mask making, Quartz, Lithography

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SPIE Journal Paper | 1 April 2003

Understanding chromatic aberration impacts on lithographic imaging

Kafai Lai, Ivan Lalovic, Robert Fair, Armen Kroyan, Christopher Progler, Nigel Farrar, Dennis Ames, Khurshid Ahmed

JM3, Vol. 2, Issue 02, (April 2003) https://doi.org/10.1117/12.10.1117/1.1562929

KEYWORDS: Chromatic aberrations, Image enhancement, Lithography, Excimer lasers, Image processing, Electroluminescence, Optical simulations, Lithographic illumination, Monochromatic aberrations, Deep ultraviolet

Proceedings Article | 15 January 2003 Paper

Paper

Design rules for the fabrication of binary half-tone masks used for MEMS and photonic devices

Peter Rhyins, Christopher Progler, Glenn Claydon, Ernest Balch

Proceedings Volume 4979, (2003) https://doi.org/10.1117/12.478283

KEYWORDS: Photomasks, Semiconducting wafers, Computer aided design, Critical dimension metrology, Binary data, Photoresist processing, Calibration, Microelectromechanical systems, Photonic devices, Deep ultraviolet

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Proceedings Article | 27 December 2002 Paper

Paper

Application of chromeless phase lithography (CPL) masks in ArF lithography

Bryan Kasprowicz, Christopher Progler, Wei Wu, Will Conley, Lloyd Litt, Douglas Van Den Broeke, Kurt Wampler, Robert Socha

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468107

KEYWORDS: Photomasks, Lithography, Quartz, Etching, Manufacturing, Reticles, Inspection, Antireflective coatings, Optical proximity correction, Binary data

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Proceedings Article | 30 July 2002 Paper

Paper

Methodology for generating exposure tool specifications for alternating phase-shift mask application for 70-nm node

Kafai Lai, Gregg Gallatin, Alan Rosenbluth, Carlos Fonseca, Lars Liebmann, Christopher Progler

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474583

KEYWORDS: Monte Carlo methods, Critical dimension metrology, Photomasks, Wavefronts, Monochromatic aberrations, Mathematical modeling, Phase shifts, Spatial frequencies, Diffraction, Data modeling

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Proceedings Article | 30 July 2002 Paper

Paper

Minimization of image placement errors in chromeless phase-shift mask lithography

Michael Fritze, Brian Tyrrell, Susan Cann, Chris Carney, Betty Blachowicz, David Brzozowy, Thomas Kocab, Scott Bowdoin, Peter Rhyins, Christopher Progler, Patrick Martin

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474592

KEYWORDS: Image processing, Photomasks, Phase shifts, Lithography, Etching, Quartz, Coherence (optics), Mask making, Photoresist processing, Metrology

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Proceedings Article | 14 September 2001 Paper

Paper

CD control of low-k-factor step-and-scan lithography

Christopher Ausschnitt, Christopher Progler, William Chu

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435729

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Lithography, Control systems, Metrology, Modulation, Photomasks, Chlorine, Feedback control, Scanning electron microscopy

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Proceedings Article | 14 September 2001 Paper

Paper

Scattered light: the increasing problem for 193-nm exposure tools and beyond

Kafai Lai, ChungHsi Wu, Christopher Progler

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435712

KEYWORDS: Light scattering, Scattering, Spatial frequencies, Projection systems, Imaging systems, Scanners, Image quality, Fractal analysis, Opacity, Point spread functions

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Proceedings Article | 14 September 2001 Paper

Paper

Characterization of linewidth variation on 248- and 193-nm exposure tools

Allen Gabor, Timothy Brunner, Jia Chen, Norman Chen, Sadanand Deshpande, Richard Ferguson, David Horak, Steven Holmes, Lars Liebmann, Scott Mansfield, Antoinette Molless, Christopher Progler, Paul Rabidoux, Deborah Ryan, Peter Talvi, Len Tsou, Ben Vampatella, Alfred Wong, Qingyun Yang, Chienfan Yu

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435708

KEYWORDS: Reticles, Semiconducting wafers, Binary data, Lithography, Scanning electron microscopy, Critical dimension metrology, Scanners, Photomasks, Logic, Etching

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Proceedings Article | 26 April 2001 Paper

Paper

Simulation-enabled decision making in advanced lithographic manufacturing

Christopher Progler

Proceedings Volume 4404, (2001) https://doi.org/10.1117/12.425236

KEYWORDS: Manufacturing, Semiconducting wafers, Lithography, Data modeling, Optical proximity correction, Reticles, Photomasks, Reverse modeling, Process modeling, Error analysis

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Proceedings Article | 5 July 2000 Paper

Paper

Interaction of pattern orientation and lens quality on CD and overlay errors

Scott Bukofsky, Christopher Progler

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389020

KEYWORDS: Reticles, Critical dimension metrology, Semiconducting wafers, Capacitors, Photomasks, Image processing, Monochromatic aberrations, Lithography, Semiconductors, Integrated circuits

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Proceedings Article | 5 July 2000 Paper

Paper

Zernike coefficients: are they really enough?

Christopher Progler, Alfred Wong

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389042

KEYWORDS: Wavefronts, Lithography, Error analysis, Spatial frequencies, Tolerancing, Critical dimension metrology, Zernike polynomials, Interferometry, Reticles, Wavefront aberrations

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Proceedings Article | 26 July 1999 Paper

Paper

Application of blazed gratings for determination of equivalent primary azimuthal aberrations

Joseph Kirk, Christopher Progler

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354375

KEYWORDS: Monochromatic aberrations, Reticles, Semiconducting wafers, Photoresist materials, Image processing, Diffraction gratings, Diffraction, Wavefronts, Absorption, Modulation

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Proceedings Article | 26 July 1999 Paper

Paper

Method to budget and optimize total device overlay

Christopher Progler, Scott Bukofsky, Donald Wheeler

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354331

KEYWORDS: Overlay metrology, Error analysis, Instrument modeling, Critical dimension metrology, Semiconducting wafers, Reticles, Lithography, Wavefronts, Optical alignment, Distortion

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Proceedings Article | 29 June 1998 Paper

Paper

Pupil illumination: in-situ measurement of partial coherence

Joseph Kirk, Christopher Progler

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310757

KEYWORDS: Photoresist materials, Lithographic illumination, Photomasks, Lithography, Critical dimension metrology, Semiconducting wafers, Optical lithography, Optical proximity correction, Image resolution, Opacity

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Proceedings Article | 29 June 1998 Paper

Paper

Optical lens specifications from the user's perspective

Christopher Progler, Donald Wheeler

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310755

KEYWORDS: Wavefronts, Lithography, Wavefront aberrations, Distortion, Reverse engineering, Monte Carlo methods, Error analysis, Monochromatic aberrations, Diffraction, Reticles

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Proceedings Article | 7 July 1997 Paper

Paper

Potential causes of across field CD variation

Christopher Progler, Hong Du, Greg Wells

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.275986

KEYWORDS: Critical dimension metrology, Control systems, Lithography, Projection systems, Reticles, Photoresist materials, Stray light

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Proceedings Article | 7 July 1997 Paper

Paper

Effect of the partial coherence on reflective notching

Robert Socha, Christopher Progler, Andrew Neureuther

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.275979

KEYWORDS: Reflectivity, Photoresist materials, Optical lithography, Critical dimension metrology, Numerical simulations, Projection systems, Printing, Electromagnetic simulation, Scanning electron microscopy, Deep ultraviolet

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Proceedings Article | 7 June 1996 Paper

Paper

Application of deep-UV resist for 0.25-um metal and poly processing

William Krisa, Christopher Progler, Ken Brennan, J. Schell

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240905

KEYWORDS: Etching, Deep ultraviolet, Photoresist processing, Tin, Interfaces, Metals, Reflectivity, Manufacturing, Semiconducting wafers, Critical dimension metrology

Read Abstract +

Implementation of DUV (248 nm) into 0.25 micrometers production requires an understanding of the associated process complexity. With DUV resists, this encompasses addressing issues of profile integrity on various substrates, etch resistance, and adequate process margin to achieve optimum performance in production. A goal of implementing DUV processes directly into already established flows without modifications to substrates, forces the resolution to these issues. To investigate the ability of accomplishing this with DUV resists, this study concentrates on pattern capability over various bottom organic ARL (gate level) and TiN (metal) substrates. The first part of this study explores issues of resist profile integrity at the resist/ARL interface, resist and ARL etch rates and the resist/ARL systems are used. Improved performance over topography is also noted for specific resist/ARL combinations. Simulations of resist linewidth versus resist thickness show a large reduction in the swing curve amplitude for all ARLs with little difference in switch ratio between ARL materials. Experimental resist swing curves also demonstrate a large reduction in the resist swing curve for all ARLs. However, the resist profile at the ARL interface transitions from a very slight foot to a small undercut as resist thickness show similar capability between each ARL in suppressing standing waves, modeling shows that at least part of this profile change can be attributed to the phase and amplitude of the residual standing wave at the resists/ARL interface. Regarding process performance, a focus latitude of up to 1.0 micrometers with nearly vertical profiles is achieved for 0.25 micrometers equal lines and spaces. Etch rate results show a large difference between the materials with the ARL to resist ratios range from 0.7 to 1.2. The second part of this evaluation addresses patterning DUV resists on TiN/metal substrates. The amount of footing depends on the resist used and can be reduced for a given resist through process optimization. Using an optimized process for a given resist, a k₁ factor of 0.53 is achieved with 1.1 micrometers of resist on TiN. Etch rate tests demonstrate adequate resist remaining after etching the full metal stack. These results demonstrate significant improvements in compatibility between DUV resist and new bottom organic ARLs or TiN. While fundamental issues that caused degradation of resist profiles have been reduced or eliminated, process flexibility is still limited by resist/substrate combinations that lead to poor performance. New generations of resists that overcome these compatibility issues allow for integration into existing flows without flow or substrate modifications. However, until more substrate tolerant DUV resists are developed, manufacturing with DUV will require layer specific resist processes.

Proceedings Article | 22 September 1995 Paper

Paper

Comparison of simulated and experimental CD-limited yield for a submicron i-line process

Edward Charrier, Christopher Progler, Chris Mack

Proceedings Volume 2635, (1995) https://doi.org/10.1117/12.221434

KEYWORDS: Critical dimension metrology, Computer simulations, Lithography, Photomasks, Cadmium, Semiconducting wafers, Photoresist processing, Metrology, Error analysis, Temperature metrology

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Showing 5 of 77 publications

Proceedings Volume Editor (3)

SPIE Conference Volume | 27 January 2005

Advanced Microlithography Technologies

SPIE Conference Volume | 14 September 2001

Optical Microlithography XIV

SPIE Conference Volume | 5 July 2000

Optical Microlithography XIII

Conference Committee Involvement (21)

SPIE Advanced Lithography

21 February 2016 | San Jose, United States

SPIE Advanced Lithography

23 February 2014 | San Jose, United States

SPIE Advanced Lithography

24 February 2013 | San Jose, United States

SPIE Advanced Lithography

12 February 2012 | San Jose, United States

SPIE Lithography Asia - Korea

13 October 2010 | n/a, Republic of Korea

SPIE Advanced Lithography

21 February 2010 | San Jose, United States

SPIE Lithography Asia - Taiwan

18 November 2009 | Taipei, Taiwan

SPIE Advanced Lithography

22 February 2009 | San Jose, United States

SPIE Lithography Asia - Taiwan

4 November 2008 | Taipei, Taiwan

SPIE Advanced Lithography

24 February 2008 | San Jose, United States

Advanced Microlithography Technology

12 November 2007 | Beijing, China

SPIE Advanced Lithography

25 February 2007 | San Jose, United States

Design and Process Integration for Microelectronic Manufacturing IV

23 February 2006 | San Jose, California, United States

Design and Process Integration for Microelectronic Manufacturing IV

3 March 2005 | San Jose, California, United States

Advanced Microlithography Technologies

8 November 2004 | Beijing, China

Design and Process Integration for Microelectronic Manufacturing III

26 February 2004 | Santa Clara, California, United States

Advanced Microelectronic Manufacturing

27 February 2003 | Santa Clara, United States

Optical Microlithography XVI

25 February 2003 | Santa Clara, California, United States

Design, Process Integration, and Characterization for Microelectronics

7 March 2002 | Santa Clara, United States

Optical Microlithography XIV

27 February 2001 | Santa Clara, CA, United States

Optical Microlithography XIII

1 March 2000 | Santa Clara, CA, United States

Showing 5 of 21 Conference Committees

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