Amorphous selenium (a-Se) is a high gain, low dark current, large area compatible photoconductor that has received significant attention towards the development of UV and X-ray detectors for medical imaging. Indirect detectors utilizing a-Se often feature blue emitting scintillators due to the high attenuation coefficient of a-Se in that region. However, emission tails from the scintillators often fall out of the conversion range of a-Se, and scintillators with emission peaks outside the absorption of Se cannot be utilized. In order to improve the sensitivity and gain in a-Se indirect detectors, we propose doping a-Se with tellurium as a function of depth, where tail emission will be absorbed by the lower bandgap aSe/Te after primary absorption in the initial Se layer. In addition, we employ a lateral device structure to avoid any absorption at short wavelengths from a transparent electrode or blocking layer. In this work, we present the first steps towards fabricating these devices. Studies of charge transport in doped a-Se/Te devices are performed using the transient photocurrent time-of-flight technique. We report hole and electron mobilities for a-Se1-xTex (x = 0, 0.01, 0.05, 0.10) as a function of applied voltage, along with band gaps and comparisons to previous studies. Fabrication of lateral devices, with and without optical slits, is demonstrated and discussed.
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