In this work, we aim to demonstrate the progress of dry resist development to address specific challenges of high NA EUV lithography. As features scales, resist thickness and interface between resist and underlayer play a crucial role. The co-optimization of underlayers with dry technology enables tuning of the patterning stack for optimal performance. Dry deposition of resists offers precise control over thickness and composition to improve material variability. Dry development reduces the likelihood of pattern collapse and enhances the ability to print features at higher aspect ratio. Defect characterization at pitch 28nm test vehicles at imec have been used to validate the material and process improvements in the dry resist program. Furthermore, dry resist patterning performance at pitch 24nm dense line-space and pitch 34nm hexagonal dense pillars and contact holes will be discussed showing the readiness towards the high NA EUV patterning.
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