In this paper the use of the EPE metric directly in the process optimization method for a DRAM use case has been researched. We show that EPE-aware optimization, using scanner dose and overlay control sub-recipes, is outperforming conventional optimization in terms of EPE Dies in Spec. Hence, it can be expected that also device yield can be improved by EPE-aware control.
The purpose of our study is to evaluate the benefit of contrast enhancement strategies on a logic metal layer at pitch 28 nm. We build up on three studies from imec and ASML [1][2][3]. We take as a reference a Negative Tone Development (NTD) Metal Oxide Resist (MOR) process used in combination with a binary TaBN mask absorber, without SRAF, exposed with an X/Y symmetric pupil on a 0.33 NA EUV scanner, the NXE:3400 from ASML [7]. The fading mitigation strategies leverage asymmetrical pupil (monopole), wavefront injection (Z6 aberration) and low-n attenuated Phase Shift Mask (PSM). We find very good agreement between our simulations on design clips, the theoretical expectations and the experimental data shared in the above mentioned papers on building blocks (L/S through pitch and dense tip-to-tip). Overall the three fading correction techniques are efficient to improve the printability of our use case in term of ILS. It also improves the best focus shift of L/S through pitch and between L/S and tip-to-tip. In conclusion, the most promising exposure strategy for the logic metal pitch 28 nm use case is the attenuated PSM. It provides the highest ILS, the narrower best focus range, the largest overlapping process window without any compromise on the illumination efficiency, i.e. using the full NXE:3400 throughput.
We show, in simulation and by wafer exposures, how to improve an EUV Single Exposure Metal direct print at NA 0.33. Based on a fundamental understanding of Mask 3D effects, we show how to design a pupil in conjunction with induced aberrations to cure the M3D phase effects. For L/S through pitch, we increase NILS/exposure latitude by ~10%, reduce the best focus range by two thirds, and reduce Bossung tilts. Simultaneously, we reduce tip-to-tip (T2T) CD by 1-4nm at constant exposure latitude and LCDU. In EUV, M3D effects lead to phase modulation of the diffracted orders. This results in relative pattern shifts of images coming from different pixels in the pupil. We find that these pattern shifts are pole specific as M3D phase effects effectively induce phase tilts of opposite sign for opposite poles. This results in a pattern independent aerial image shifts for each pole. Here we show how these shifts can explain M3D phase effects (NILS loss by fading, best focus through pitch variation, Bossung tilts) and how they drive source optimization. Furthermore, we show how it is possible to counteract these M3D effects. Disentangling the diffraction orders, so that each point in the pupil plane is passed only by a single diffraction order, we can find a suitable aberration (Z6 for L/S) that effectively introduces a phase tilt of opposite sign per pole and cures the M3D effects. The idea is also applicable to other use cases: For dense contact holes we need to inject a phase front that shifts 0th against 1st order phase.
A pupil optimization was carried out for the M2 layer of the imec N7 (foundry N5 equivalent) logic design. This is exposed as a single print EUV layer. We focused on the printability of the toughest parts of the design: a dense line space grating of 32 nm pitch and a tip-tip grating of 32 nm pitch, tip-to-tip target CD of 25 nm. We found that the pupil optimization can improve both the line space and the tip-to-tip gratings energy latitude and depth of focus. The tip-to-tip target CD can be pushed further, enabling further design scaling.
Assist features are commonly used in DUV lithography to improve the lithographic process window of isolated features under illumination conditions that enable the printability of dense features. With the introduction of EUV lithography, the interaction between 13.5 nm light and the mask features generates strong mask 3D effects. On wafer, the mask 3D effects manifest as pitch-dependent best focus positions, pattern asymmetries and image contrast loss. To minimize the mask 3D effects, and enhance the lithographic process window, we explore by means of wafer print evaluation the use of assist features with different sizes and placements. The assist features are placed next to isolated features and two bar structures, consistent with theN5 (imec iN7) node dimensions for 0.33NA and we use different types of off-axis illumination . For the generic iN7 structures, wafer imaging will be compared to simulation results and an assessment of optimal assist feature configuration will be made. It is also essential to understand the potential benefit of using assist features and to weigh that benefit against the price of complexity associated with adding sub-resolution features on a production mask. To that end, we include an OPC study that compares a layout treated with assist features, to one without assist features, using full-chip complexity metrics like data size.
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