Dr. Shmuel Ben Nissim Profile

Dr. Shmuel Ben Nissim

at Applied Materials Israel, Ltd.

SPIE Involvement:

Author

Publications (4)

Proceedings Article | 27 April 2023 Presentation + Paper

300mm in-line metrologies for the characterization of ultra-thin layer of 2D materials

A. Moussa, J. Bogdanowicz, B. Groven, P. Morin, M. Beggiato, M. Saib, G. Santoro, Y. Abramovitz, K. Houtchens, S. Ben Nissim, N. Meir, J. Hung, A. Urbanowicz, R. Koret, I. Turovets, G. Lorusso, A.-L. Charley

Proceedings Volume 12496, 124961X (2023) https://doi.org/10.1117/12.2657968

KEYWORDS: Semiconducting wafers, Scanning electron microscopy, Monolayers, Scatterometry, 2D materials, Metrology, Atomic force microscopy, Raman spectroscopy, Silicon, Histograms

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SPIE Journal Paper | 4 November 2022

Process window improvement for fin cut layer in self-aligned double-patterning process based on backscattered electron imaging

Yu Zhang, David Wei Zhang, Yuyang Bian, Biqiu Liu, Cong Zhang, Jun Huang, Jiawang Song, Yang Gao, Qiang Zhou, Wei Chen, Siqun Xiao, Shmuel Ben Nissim, Kevin Houchens, Omri Baum, Amit Zakay, Tal Ayzik, Yaniv Abramovitz

JM3, Vol. 21, Issue 04, 041605, (November 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.4.041605

KEYWORDS: Etching, System on a chip, Image processing, Sensors, Lithography, Semiconducting wafers, Distance measurement, Process control, Transistors, Signal to noise ratio

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Proceedings Article | 13 June 2022 Presentation

A holistic study of edge placement error on fin cut layer in self-aligned double patterning process

Yuyang Bian, Biqiu Liu, Xijun Guan, Xiaobo Guo, Cong Zhang, Wenzhan Zhou, Jun Huang, Yu Zhang, Jiawang Song, Yang Gao, Shmuel Nissim, Kevin Houchens, Omri Baum, Qiang Zhou, Zaisan Yang, Amit Zakay, Tal Ayzik, Yaniv Abramovitz

Proceedings Volume PC12053, PC120530D (2022) https://doi.org/10.1117/12.2614221

KEYWORDS: Overlay metrology, Double patterning technology, Edge roughness, Scanning electron microscopy, Manufacturing, Line width roughness, Line edge roughness, Integrated circuits, Electron microscopy, Critical dimension metrology

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Proceedings Article | 19 August 2021 Presentation + Paper

The importance of in-die sampling using E-beam solution on yield improvement

Yu Zhang, Biqiu Liu, Cong Zhang, Yuyang Bian, Song Gao, Yifei Zhu, Xiaobo Guo, Jun Huang, Yaniv Abramovitz, Qiang Zhou, Uri Smolyan, Omri Baum, Shmuel Ben Nissim, Alexander Vipolzov

Proceedings Volume 11611, 116111X (2021) https://doi.org/10.1117/12.2585391

KEYWORDS: Overlay metrology, Instrument modeling, Semiconducting wafers, Measurement devices, Wafer-level optics, Mathematical modeling, Yield improvement, Etching, Optical testing, Data modeling

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