Mr. Xavier Buch Profile

Xavier Buch

Vice President, Sales and T&A at JSR Micro NV

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Publications (6)

Proceedings Article | 20 March 2015 Paper

A comprehensive approach for micro and multiple bridges mitigation in immersion photolithography

L. D'Urzo, W. Schollaert, X. Buch, H. Stokes, Y. Thouroude

Proceedings Volume 9425, 94251Y (2015) https://doi.org/10.1117/12.2085627

KEYWORDS: Bridges, Standards development, Molecular bridges, Particles, Optical lithography, Line width roughness, Photoresist materials, Polymers, Metals, Lithography

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Proceedings Article | 17 April 2014 Paper

Novel EUV resist materials for 16nm half pitch and EUV resist defects

Motohiro Shiratani, Takehiko Naruoka, Ken Maruyama, Ramakrishnan Ayothi, Yoshi Hishiro, Kenji Hoshiko, Andreia Santos, Xavier Buch, Tooru Kimura

Proceedings Volume 9048, 90481D (2014) https://doi.org/10.1117/12.2046133

KEYWORDS: Extreme ultraviolet, Line width roughness, Extreme ultraviolet lithography, Lithography, Fluorine, Semiconducting wafers, Diffusion, Chemical species, Line edge roughness, Absorbance

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Proceedings Article | 21 March 2012 Paper

Ultimate lithographic performances of advanced resists CAR or non-CAR resist?

Jan Frederik Van Steenbergen, Noboru Ootsuka, Xavier Buch, Béatrice Icard, Claire Sourd, Christophe Constancias, Bernard Dalzotto, Laurent Pain

Proceedings Volume 8323, 83232M (2012) https://doi.org/10.1117/12.916624

KEYWORDS: Photoresist materials, Lithography, Line width roughness, Electron beam lithography, Extreme ultraviolet, Chemically amplified resists, Electron beams, Semiconducting wafers, Silicon, Chemistry

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Proceedings Article | 20 March 2012 Paper

Patterning development in spin-on hard mask systems for 30nm half-pitch EUV technology

Vincent Truffert, Ivan Pollentier, Philippe Foubert, Frederic Lazzarino, Yuusuke Anno, Christopher Wilson, Monique Ercken, Roel Gronheid, Steven Demuynck, Xavier Buch

Proceedings Volume 8325, 832511 (2012) https://doi.org/10.1117/12.916149

KEYWORDS: Extreme ultraviolet, Photomasks, Optical lithography, Photoresist materials, Extreme ultraviolet lithography, Etching, Polymers, System on a chip, Glasses, Semiconducting wafers

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As Extreme Ultra Violet technology (EUV) is being introduced, multilayer hard mask patterning becomes a key option in order to transfer the lithographic patterns into the circuit stack. In particular, spin-on multilayers can play a decisive role on the process roadmap as a more cost-effective solution than Chemical Vapour Deposition options. The integration of spin-on hard masks in EUV technology nevertheless requires these products to be EUV-outgassing friendly. In addition to this, the spin-on solutions must withstand the demanding photoresist and circuit stack aspect ratios during patterning. This paper presents the EUV process development for contacted metal lines with 30nm half-pitch dimensions in a dual damascene application. The performance of an all-spin-on multilayer system composed of an EUVphotosensitive layer, an organic underlayer, a silicon-rich middle layer and a carbon-rich bottom layer is demonstrated. Firstly, outgassing of the various polymer layers in vacuum is a critical parameter to control since it can directly impact the EUV-tool-optics lifetime. The qualification, selection and process optimisation of different materials for use in the ASML NXE:3100 EUV scanner are shown by interpreting Residual Gas Analysis data. The outgassed species for different types of layers are compared. In this study, the shielding effect of the top layers on the outgassing of the layers underneath is quantified. The influence of the layer composition is also discussed. Secondly, the lithographic performance of the 30nm half-pitch process on the NXE:3100 is characterized with process windows and profile control using the IMEC process-of-reference. The CD uniformity results within wafer and across wafer-batches are used to demonstrate the process maturity. Finally, considering the patternability of the EUV process, we demonstrate the ability of the all-spin-on multilayer system to planarize over the challenging dual damascene topography. To conclude on the potential of this scheme, we describe the etched dual damascene patterns into a dielectric stack which is representative for the 30nm half pitch technology node.

Proceedings Article | 30 March 2010 Paper

Point-of-use filtration methods to reduce defectivity

Jennifer Braggin, Wim Schoallert, Kenji Hoshiko, Xavier Buch

Proceedings Volume 7639, 763918 (2010) https://doi.org/10.1117/12.846346

KEYWORDS: Semiconducting wafers, Chemistry, Composites, Manufacturing, Photoresist processing, Coating, Particles, Immersion lithography, Digital watermarking, Manufacturing equipment

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Proceedings Article | 4 March 2010 Paper

LENS (lithography enhancement toward nano scale): a European project to support double exposure and double patterning technology development

Pietro Cantu, Livio Baldi, Paolo Piacentini, Joost Sytsma, Bertrand Le Gratiet, Stéphanie Gaugiran, Patrick Wong, Hiroyuki Miyashita, Luisa Atzei, Xavier Buch, Dick Verkleij, Olivier Toublan, Francesco Perez-Murano, David Mecerreyes

Proceedings Volume 7640, 764022 (2010) https://doi.org/10.1117/12.846030

KEYWORDS: Double patterning technology, Photomasks, Lithography, Metrology, Etching, Optical lithography, Algorithm development, Immersion lithography, Materials processing, Manufacturing

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Showing 5 of 6 publications

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