KEYWORDS: Oxides, Field effect transistors, Transistors, Instrument modeling, Molybdenum, Radio frequency circuits, Data modeling, Device simulation, Interference (communication), Oscillators
This paper reviews the recent results of the flicker noise characterization and modeling of MOSFETs for RF IC design. The dependences of flicker noise characteristics to process parameters, such as the thickness and quality of gate oxide, and the device parameters, such as the channel length/width and fingers, have been summarized to better understand the flicker noise bahavior and develop physical and accurate flicker noise models. The physical origin of the flicker noise and the issues of the existing compact models in predicting the flicker noise characteristics have been also discussed. Furthermore, the impact of flicker noise to the phase noise of RF circuits is studied while looking for either process or circuit approaches to reduce the influence of flicker noise contribution to the circuit noise. Finally, some modeling approaches are proposed to improve existing compact flicker noise models to predict the noise behavior of RF circuits well.
This paper reviews and also discusses some of the important issues in MOSFET Modeling for radio frequency integrated circuits (RFICs). A brief review of some popular or common MOSFET models that can predict the RF properties of MOSFETs is presented. At present, these include BSIM3v3, EKV, MOS Model 9 and adaptations of HSPICE models, and most of them are discussed here. Attention is paid to RF noise parameter extraction and modeling of MOSFETs, since this has been relatively neglected compared to the AC modeling and parameter extraction. Finally, some new and exciting result son the effects of DC electrical stresses on the microwave properties of NMOSFETs, especially the unity current-gain frequencies and maximum oscillation frequencies are presented for different stress times and at different biasing conditions. Modeling of the effects of stress on the RF properties of MOSFETs is still to be investigated.
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