Paper
15 October 2015 Comparative study of Nd:KGW lasers pumped at 808 nm and 877 nm
Author Affiliations +
Proceedings Volume 9671, AOPC 2015: Advances in Laser Technology and Applications; 96711W (2015) https://doi.org/10.1117/12.2202935
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China
Abstract
The laser performance and thermal analysis of Nd:KGW laser continuously pumped by 808 nm and 877 nm are comparatively investigated. Output power of 670 mW and 1587 mW, with nearly TEM00 mode, are achieved respectively at 808 nm pump and 877 nm pump. Meanwhile, a high-power passively Q-switched Nd:KGW/Cr4+:YAG laser pumped at 877 nm is demonstrated. An average output power of 1495 mW is obtained at pump power of 5.22 W while the laser is operating at repetition of 53.17 kHz. We demonstrate that 877 nm diode laser is a more potential pump source for Nd:KGW lasers.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ke Huang, Wen-Qi Ge, Tian-Zhuo Zhao, Jian-Guo He, Chen-Yong Feng, and Zhong-Wei Fan "Comparative study of Nd:KGW lasers pumped at 808 nm and 877 nm", Proc. SPIE 9671, AOPC 2015: Advances in Laser Technology and Applications, 96711W (15 October 2015); https://doi.org/10.1117/12.2202935
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KEYWORDS
Crystals

Semiconductor lasers

Q switched lasers

Laser crystals

Mirrors

Diodes

Refractive index

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