Paper
24 March 2017 Advanced application of pattern-aware OPC
James Chen, Shin-Shing Yeh, Alan Zhu, Bayram Yenikaya, Fan-Hsuan Hsu, Yung-Ching Mai, Lawrence Lin, Nelson Lai
Author Affiliations +
Abstract
For advanced technology nodes, it’s critical to address yield issues caused by process specific layout patterns with limited process window. RETs such as Model-Based Sub-Resolution Assist Feature (MB-SRAF) are introduced to guarantee high lithographic margin, but these techniques come with long runtime, especially when applied full-chip. There’s also lack of integrated solution to easily identify, define comprehensive patterns and apply different controls and/or constraints over these patterns through different stages of OPC/RET process.

In this paper, we introduce a flow that applies advanced RET such as MBSRAF or specific local corrections to layouts with critical and yield limiting patterns. We also introduce in-process pattern match based on Cadence topological Squish pattern. Overall, this new flow of Pattern-Aware OPC (PA-OPC) achieves better margin for hotspots, without sacrificing turnaround time and is able to handle more complex patterns and environment than traditional methods. We demonstrate the benefit of the new flow with fine-grained process window control over different patterns.
© (2017) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Chen, Shin-Shing Yeh, Alan Zhu, Bayram Yenikaya, Fan-Hsuan Hsu, Yung-Ching Mai, Lawrence Lin, and Nelson Lai "Advanced application of pattern-aware OPC", Proc. SPIE 10147, Optical Microlithography XXX, 101471W (24 March 2017); https://doi.org/10.1117/12.2258331
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KEYWORDS
Optical proximity correction

SRAF

Resolution enhancement technologies

Model-based design

Yield improvement

Lithography

193nm lithography

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