For advanced technology nodes, it’s critical to address yield issues caused by process specific layout patterns with limited process window. RETs such as Model-Based Sub-Resolution Assist Feature (MB-SRAF) are introduced to guarantee high lithographic margin, but these techniques come with long runtime, especially when applied full-chip. There’s also lack of integrated solution to easily identify, define comprehensive patterns and apply different controls and/or constraints over these patterns through different stages of OPC/RET process.
In this paper, we introduce a flow that applies advanced RET such as MBSRAF or specific local corrections to layouts with critical and yield limiting patterns. We also introduce in-process pattern match based on Cadence topological Squish pattern. Overall, this new flow of Pattern-Aware OPC (PA-OPC) achieves better margin for hotspots, without sacrificing turnaround time and is able to handle more complex patterns and environment than traditional methods. We demonstrate the benefit of the new flow with fine-grained process window control over different patterns.
It’s critical to address the yield issues caused by process specific layout patterns with limited process window. RETs such as PWOPC are introduced to guarantee high lithographic margin, but these techniques cost high run-time when applied to full-chips. There’s also lack of integrated solution to easily identify, define comprehensive patterns and apply different controls and/or constraints over these patterns through different stages of OPC/RET process. In this paper, we study a pattern aware OPC flow that applies PWOPC or specific corrections locally to layouts with critical and yield limiting patterns. Although the full chip PWOPC provides an effective way, it causes great amount of run time penalty and does not achieve optimal process window. Overall, PAOPC achieves the better margins over the hotspots, without sacrificing turnaround time. The study demonstrates the benefit of the new flow with fine grained process window controls over different patterns. This flow get good improvement on defect counts when evaluated on 50 nm node logic devices.
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