Dr. Han-shin Lee Profile

Dr. Han-shin Lee

at SAMSUNG Electronics Co Ltd

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Author

Publications (11)

Proceedings Article | 20 May 2016 Paper

Formation mechanism of the photomask blanks material related haze

Jung-Jin Kim, Junyoul Choi, Soowan Koh, Minho Kim, Jiyoung Lee, Han-Shin Lee, Byung Gook Kim, Chan-uk Jeon

Proceedings Volume 9984, 99840W (2016) https://doi.org/10.1117/12.2246678

KEYWORDS: Air contamination, Photomasks, Molybdenum, Ions, Transmission electron microscopy, Silicon, Critical dimension metrology, Wet etching, Scanners, Pellicles

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Proceedings Article | 28 June 2013 Paper

Progressive defects caused by crosstalk between mask fabrication processes

Jongkeun Oh, Junyeol Choi, Jaehyuck Choi, Han-shin Lee, Hyungho Koh, Byunggook Kim, Chanuk Jeon

Proceedings Volume 8701, 870107 (2013) https://doi.org/10.1117/12.2032735

KEYWORDS: Etching, Chlorine, Photomasks, Ions, Mask making, Inspection, Air contamination, Chlorine gas, Crystals, Chemical analysis

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Most of defects generated in mask fabrication processes have been mainly created during each unit process. It becomes more important to detect and remove smaller defects on mask as pattern nodes keep shrinking. Each unit processes are getting not only more challenging to sustain mask quality and defect level but also more influencing on other processes for smaller pattern nodes. New type of defects based on such influences (crosstalk) between different processes is starting to emerge, which is requesting for a revision of defect reduction strategy because dealing with crosstalk defects is directly related with quality and TAT of mask manufacturing. It is relatively difficult to properly understand root-cause or working mechanism of defects generated by crosstalk between different processes. This is because interaction between different processes from defect generation perspectives has hardly been studied. In this paper, we introduce emerging progressive defects created while etched masks are undergoing cleaning process or subsequent events of moving to next process or temporary storage. We will investigate how etch gas residues on mask surface remaining after etching process interact with cleaning chemicals or moisture from subsequent process or environment to trigger defect generation and its growth. We will also examine effects of POD outgassing on generation of crosstalk progressive defect. Based on this understanding, appropriate solutions to mitigate defects caused by crosstalk between mask fabrication processes will be proposed. It is believed that new type of progressive defects caused by crosstalk between different mask fabrication processes will be more flourishing in the near future where mask blank materials, mask manufacturing processes, and chemicals need to diversify in order to meet much tighter specifications of mask quality. Therefore, it is very crucial to have right understandings on the interactions between various processes and eradicate possible root-causes of defect generations.

Proceedings Article | 23 March 2012 Paper

Investigation of EUV haze defect: molecular behaviors of mask cleaning chemicals on EUV mask surfaces

Jaehyuck Choi, Steve Novak, Yudhishthir Kandel, Greg Denbeaux, Han-shin Lee, Andy Ma, Frank Goodwin

Proceedings Volume 8322, 83220S (2012) https://doi.org/10.1117/12.916499

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Ions, Extreme ultraviolet, Scanning probe microscopy, Chemical analysis, Air contamination, Industrial chemicals, Mask cleaning, Contamination

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Photo-induced defects (or haze defects) on 193nm optic masks (haze defects) have been a serious problem not only to reticle engineers working for mask manufacturing and handling but also to photo-lithography engineers. The most widely accepted explanation of the root causes of haze defects is the cleaning chemical residues remaining on the mask surface and unavoidable outgassed molecules that outgas from pellicle materials when exposed to 193nm radiation. These have been significant challenges for reticle cleaning engineers who need to use cleaning chemicals whose residues do not lead to progressive defect formation on the mask and to find improved materials to minimize pellicle outgassing. It is assumed that contamination generation on EUV masks would have a higher probability than on optic masks, primarily since EUV masks are not protected by a pellicle and amorphous carbon films can accumulate during exposure to EUV light. While there is potential to mitigate the generation of carbon contamination by improving the exposure tool environment and removing carbon films using in-situ atomic hydrogen cleaning, it is not yet clear whether the reaction of mask cleaning chemicals to EUV radiation will lead to creation of progressive defects on EUV mask surfaces. With the work to being done it has been observed that carbon contamination on EUV masks dominates any effects of solvent chemicals under normal environmental or exposure conditions (from atmospheric pressure up to a vacuum level of 10^-6 Torr) during EUV exposure. However, it is still unknown whether residual cleaning chemicals will provide a nucleus for progressive defect formation during exposure. This lack of understanding needs to be addressed by the industry as EUV masks are expected to undergo more frequent cleaning cycles. In this work, we will report on an investigation of the molecular behavior of cleaning chemicals on EUV mask surfaces during EUV exposure. Movement (e.g., migration or aggregation) of cleaning chemical molecules near EUV exposure spots on the top surface and beneath the mask will be examined under high vacuum (~10^-8 Torr). We will also investigate whether EUV exposure can trigger the evaporation of cleaning chemical residues from the EUV mask surface, possibly contaminating the exposure environment. Better understanding of the influences of the mask cleaning chemicals during exposure, coupled with knowledge about mask tolerance and patterning performance affected by the cleaning chemicals, should enable the proper selection of mask cleaning processes and chemicals to meet EUV requirements.

Proceedings Article | 14 October 2011 Paper

Effect of SPM-based cleaning POR on EUV mask performance

Jaehyuck Choi, Han-shin Lee, Jinsang Yoon, Takeya Shimomura, Alex Friz, Cecilia Montgomery, Andy Ma, Frank Goodwin, Daehyuk Kang, Paul Chung, Inkyun Shin, H. Cho

Proceedings Volume 8166, 81661M (2011) https://doi.org/10.1117/12.896836

KEYWORDS: Photomasks, Scanning probe microscopy, Extreme ultraviolet lithography, Extreme ultraviolet, Ruthenium, Optical lithography, Surface roughness, Reflectivity, Deep ultraviolet, Cadmium

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Proceedings Article | 25 September 2010 Paper

Damage/organic free ozonated DI water cleaning on EUVL Ru capping layer

Seung-ho Lee, Bong-kyun Kang, Hyuk-min Kim, Min-soo Kim, Han-ku Cho, Chan-uk Jeon, Hyung-ho Ko, Han-shin Lee, Jin-ho Ahn, Jin-Goo Park

Proceedings Volume 7823, 78232Z (2010) https://doi.org/10.1117/12.878895

KEYWORDS: Ruthenium, Ozone, Extreme ultraviolet lithography, Oxygen, Gases, Carbon dioxide, Carbon, Scanning probe microscopy, Lithography, Atomic force microscopy

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Proceedings Article | 26 May 2010 Paper

Effect of EUV exposure upon surface residual chemicals on EUV mask surface

Han-Shin Lee, Jaehyuck Choi, DonGun Lee, Hyungho Ko, SeongSu Kim, Chan-Uk Jeon, HanKu Cho

Proceedings Volume 7748, 774804 (2010) https://doi.org/10.1117/12.868292

KEYWORDS: Carbon, Extreme ultraviolet lithography, Ions, Extreme ultraviolet, Contamination, Photomasks, Reflectivity, Ruthenium, Air contamination, Optical lithography

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Proceedings Article | 20 October 2008 Paper

A new paradigm for haze improvement: retardation of haze occurrence by creating mask substrate insensitive to chemical contamination level

Han-Shin Lee, Jaehyuck Choi, Jin-Sik Jung, Jong-Keun Oh, Soo-Jung Kang, Hae-Young Jeong, Sang-Gyun Woo, HanKu Cho

Proceedings Volume 7122, 712217 (2008) https://doi.org/10.1117/12.801422

KEYWORDS: Air contamination, Ions, Resistance, Sulfur, Photomasks, Contamination, Transmittance, Surface roughness, Chemical analysis, Molecules

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Proceedings Article | 19 May 2008 Paper

Prevention of chemical residue from growing into Haze defect on PSM pattern edge after normal cleaning process

Jaehyuck Choi, Jin-sik Jung, Han-shin Lee, Jongkeun Oh, Soojung Kang, Haeyong Jeong, Yonghoon Kim, HanKu Cho

Proceedings Volume 7028, 702818 (2008) https://doi.org/10.1117/12.793049

KEYWORDS: Air contamination, Ions, Oxides, Photomasks, Industrial chemicals, Profiling, Sulfur, Scanning probe microscopy, Information operations, Silica

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Proceedings Article | 27 March 2008 Paper

Lifetime of EUVL masks as a function of degree of carbon contamination and capping materials

Sungmin Huh, Hoon Kim, Gisung Yoon, Jaehyuck Choi, Han-Shin Lee, Dong Gun Lee, Byungsup Ahn, Hwan-Seok Seo, Dongwan Kim, Seoung Sue Kim, Han Ku Cho, Takeo Watanabe, Hiroo Kinoshita

Proceedings Volume 6921, 692115 (2008) https://doi.org/10.1117/12.772412

KEYWORDS: Photomasks, Carbon, Contamination, Ruthenium, Extreme ultraviolet lithography, Silicon, Critical dimension metrology, Reflectivity, Extreme ultraviolet, Semiconducting wafers

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Proceedings Article | 29 May 2007 Paper

Substrate effects on the characteristics of haze defect formation on the photomask surface under exposure condition

Jaehyuck Choi, Han-shin Lee, Jin-sik Jung, Byung Cheol Cha, Sang-Gyun Woo, HanKu Cho

Proceedings Volume 6607, 660709 (2007) https://doi.org/10.1117/12.728922

KEYWORDS: Ions, Air contamination, Chromium, Sulfur, Profiling, Photomasks, Molybdenum, Surface roughness, Chemical analysis, Industrial chemicals

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Proceedings Article | 20 May 2006 Paper

Photomask dry-etching techniques for hard mask

Sung-Won Kwon, Young-Ju Park, Sung-Yoon Kim, Han-shin Lee, Hyuk-Joo Kwon, Seung-Woon Choi, Woo-Sung Han

Proceedings Volume 6283, 62831T (2006) https://doi.org/10.1117/12.681756

KEYWORDS: Etching, Photomasks, Dry etching, Photoresist processing, Chlorine, Plasma etching, Chemistry, Critical dimension metrology, Plasma, Lead

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Showing 5 of 11 publications

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