In today's competitive lithography market, resist manufacturers are always striving to create a product to meet
lithographic challenges while maintaining a low inherent defect level. While bulk filtration used in resist manufacturing
removes a majority of the inherent defectivity, point-of-use filtration is still required to ensure that defects are not passed
from the bottle to the wafer. As Moore's law drives lithographers to ever decreasing dimensions, resist manufacturers
must find new ways of filtering their chemistries to make sure that the smallest defects cannot create the biggest yield
detractors. In addition, IDMs must use new innovations to explore point-of-use filtration techniques to protect their
valuable patterns.
This paper will show the conditions that can reduce defectivity in an immersion lithography scheme. More specifically,
advanced point-of-use filtration techniques, including revolutionary filter membrane technology and advanced filtration
settings, will be explored to understand potential 22nm node defect performance. By thinking ahead about the filtration
needs of the future, resist manufacturers, IDMs, and equipment manufacturers can all work toward an understanding of the complex nature of filtration, ultimately yielding a new, low defectivity regime at the smallest pattern sizes.
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